DETERMINATION OF THE TEMPERATURE INDEPENDENCE OF THE CAPTURE CROSS-SECTION OF THE GOLD ACCEPTOR LEVEL FOR ELECTRONS IN N-TYPE SILICON.
- Author
- KASSING R; KAEHLER E; DUDECK I
INST. ANGEW. PHYS., UNIV. MUENSTER - Source
- PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 30; NO 1; PP. 141-146; ABS. ALLEM.; BIBL. 12 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- PIEGEAGE PORTEUR CHARGE CENTRE ACCEPTEUR NIVEAU IMPURETE TEMPERATURE SILICIUM IMPURETE OR PHYSIQUE SOLIDE
- Keyword (en)
- SOLID PHYSICS
- Keyword (es)
- FISICA DEL ESTADO CONDENSADO
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL7630015650
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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