EFFECT OF A SECONDARY PASSIVATING FILM OF SIO2 DEPOSITED BY CATHODE SPUTTERING ON THE PARAMETERS OF PLANAR TRANSISTORS.
- Author
- ORLINOV VI; GORANCHEV BG; HRISTOV DK; CHOUBRIEV ZH R
INST. ELECTRON., BULG. ACAD. SCI., SOFIA - Source
- BULG. J. PHYS.; BULG.; DA. 1975; VOL. 2; NO 3; PP. 236-246; ABS. RUSSE; BIBL. 7 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- TRANSISTOR TRANSISTOR PLANAR PASSIVATION PULVERISATION CATHODIQUE COUCHE MINCE DIOXYDE COMPOSE SILICIUM PARAMETRE TRANSISTOR DEPOT PULVERISATION REACTIVE DIOXYDE SILICIUM ELECTROMAGNETISME ELECTRONIQUE
- Keyword (en)
- ELECTROMAGNETISM ELECTRONICS
- Keyword (es)
- ELECTROMAGNETISMO ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL7630080801
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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