THE INVESTIGATION OF ION IMPLANTED LAYERS BY SCANNING ELECTRON MICROSCOPY.
- Author
- ROTHEMUND W; FRITZSCHE CR
INST. ANGEW. FESTKOERPERPHYS., D-7800 FREIBURG, FED. REPUBL. GER. - Source
- APPL. PHYS.; GERM.; DA. 1976; VOL. 10; NO 2; PP. 111-119; BIBL. 8 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- SILICIUM GALLIUM COMPOSE ARSENIURE IMPLANTATION IMPURETE ANALYSE ME BALAYAGE DIAGRAMME CANALISATION ANALYSE DIFFUSION ELECTRON AMORPHISATION GALLIUM ARSENIURE METALLOIDE COMPOSE MINERAL CRISTALLOGRAPHIE
- Keyword (en)
- SILICON GALLIUM COMPOUND ARSENIDES CHANNELING DIAGRAM AMORPHIZATION INORGANIC COMPOUND CRISTALLOGRAPHY
- Keyword (es)
- CRISTALOGRAFIA
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL7740005956
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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