DETERMINATION OF THE TEMPERATURE DEPENDENCE OF THE CAPTURE CROSS-SECTIONS OF THE GOLD ACCEPTOR LEVEL AND OF THE TEMPERATURE OF CURRENT FILAMENTS IN SILICON PIN DIODES
- Author
- DUDECK I; KASSING R
UNIV. MUNSTER INST. ANGEWANDTE PHYS., DEU - Source
- PHYS. STATUS SOLIDI, A; DDR; DA. 1978; VOL. 49; NO 1; PP. 153-161; ABS. GER; BIBL. 18 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- DIODE DIODE COUCHE INTRINSEQUE TEMPERATURE SILICIUM FILAMENT COURANT ELECTRIQUE SECTION EFFICACE ANALYSE FONCTIONNEMENT ELECTRONIQUE
- Keyword (en)
- DIODE P I N DIODE TEMPERATURE SILICON FILAMENT ELECTRICAL CURRENTS CROSS SECTION OPERATION STUDY ELECTRONICS
- Keyword (es)
- ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL7930238842
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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