FORMATION OF INTERSTITIAL-TYPE DISLOCATION LOOPS IN TETRAHEDRAL SEMICONDUCTORS BY PRECIPITATION OF VACANCIES.
- Author
- VAN VECHTEN JA
IBM THOMAS J. WATSON RES. CENT., YORKTOWN HEIGHTS, N.Y. 10598 - Source
- PHYS. REV., B; USA; DA. 1978; VOL. 17; NO 8; PP. 3197-3206; BIBL. 1 P. 1/2
- Document type
- Article
- Language
- English
- Keyword (fr)
- DISLOCATION BOUCLE DISLOCATION SEMICONDUCTEUR ETUDE THEORIQUE LACUNE PRECIPITATION SILICIUM GALLIUM COMPOSE ARSENIURE FORMATION GALLIUM ARSENIURE METALLOIDE COMPOSE MINERAL CRISTALLOGRAPHIE
- Keyword (en)
- DISLOCATION DISLOCATION LOOP SEMICONDUCTOR MATERIALS THEORETICAL STUDY PRECIPITATION SILICON GALLIUM COMPOUND ARSENIDES INORGANIC COMPOUND CRISTALLOGRAPHY
- Keyword (es)
- CRISTALOGRAFIA
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL7940067393
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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