DETERMINATION OF THE BASIC DEVICE PARAMETERS OF A GAAS MESFET
- Author
- FUKUI H
- Source
- BELL. SYST. TECH. J.; USA; DA. 1979; VOL. 58; NO 3; PP. 771-797; BIBL. 20 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- TRANSISTOR EFFET CHAMP TRANSISTOR EFFET CHAMP BARRIERE SCHOTTKY ARSENIURE COMPOSE GALLIUM METHODE MESURE PARAMETRE TRANSISTOR ARSENIURE GALLIUM ELECTRONIQUE
- Keyword (en)
- FIELD EFFECT TRANSISTOR METAL SEMICONDUCTOR FIELD EFFECT TRANSISTOR ARSENIDES MEASUREMENT METHOD TRANSISTOR PARAMETER ELECTRONICS
- Keyword (es)
- ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL8030074733
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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