THE EFFECT OF NON-EXPONENTIAL TRANSIENTS ON THE DETERMINATION OF DEEP-TRAP ACTIVATION ENERGIES BY DEEP-LEVEL TRANSIENT SPECTROSCOPY
- Auteur
- WHITE AM; DAY B; GRANT AJ
R. SIGNALS RADAR ESTABLISHMENT,GREAT MALVERN,GBR - Source
- J. PHYS. C: SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1979; VOL. 12; NO 22; PP. 4833-4838; BIBL. 2 REF.
- Type de document
- Article
- Langue
- English
- Mot clé (fr)
- NIVEAU IMPURETE IMPURETE PROFONDE PIEGEAGE PORTEUR CHARGE ENERGIE ACTIVATION SEMICONDUCTEUR METHODE MESURE REGIME TRANSITOIRE SPECTROMETRIE TRANSITOIRE NIVEAU PROFOND PHYSIQUE SOLIDE
- Mot clé (en)
- IMPURITY LEVEL DEEP IMPURITIES CHARGE CARRIER TRAPPING ACTIVATION ENERGY SEMICONDUCTOR MATERIALS MEASUREMENT METHOD UNSTEADY FLOW DEEP LEVEL TRANSIENT SPECTROMETRY SOLID PHYSICS
- Mot clé (es)
- FISICA DEL ESTADO CONDENSADO
- Classification
- Pascal
- 001 Sciences exactes et technologie / 001B Physique / 001B60 Etat condense: structure, proprietes mecaniques et thermiques
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Provenance
- Inist-CNRS
- Base de données
- PASCAL
- Identifiant INIST
- PASCAL8030258236
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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