LOCATION OF SELF-INTERSTITIAL ATOMS IN BORON-IMPLANTED SILICON BY MEANS OF RUTHERFORD BACKSCATTERING OF CHANNELLED IONS
- Author
- GOETZ G; SOMMER G
FRIEDRICH-SCHILLER UNIV., SEKT. PHYS.,JENA 69,DDR - Source
- RAD. EFFECTS; GBR; DA. 1979; VOL. 41; NO 4; PP. 195-202; BIBL. 21 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- SILICIUM IMPLANTATION ION INTERSTITIEL SOUSSTRUCTURE ANALYSE DIFFUSION ION ANALYSE DIFFUSION RUTHERFORD TEMPERATURE AMBIANTE BASSE TEMPERATURE DOPAGE B AUTOINTERSTITIEL METALLOIDE RETRODIFFUSION HELIUM ION ATOMIQUE CRISTALLOGRAPHIE
- Keyword (en)
- SILICON ION IMPLANTATION INTERSTITIAL ROOM TEMPERATURE LOW TEMPERATURE CRISTALLOGRAPHY
- Keyword (es)
- CRISTALOGRAFIA
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL8040103811
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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