PRECISE DETERMINATION OF THE VALENCE-BAND EDGE IN X-RAY PHOTOEMISSION SPECTRA: APPLICATION TO MEASUREMENT OF SEMICONDUCTOR INTERFACE POTENTIALS
- Author
- KRAUT EA; GRANT RW; WALDROP JR; KOWALCZYK SP
ROCKWELL INTERNATIONAL ELECTRON. RES. CENT./THOUSAND OAKS CA 913630/USA - Source
- PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1980; VOL. 44; NO 24; PP. 1620-1623; BIBL. 8 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- POTENTIEL INTERFACE EMISSION PHOTOELECTRONIQUE RAYON X SEMICONDUCTEUR BANDE VALENCE STRUCTURE BANDE GALLIUM ARSENIURE PHYSIQUE SOLIDE
- Keyword (en)
- INTERFACE POTENTIAL PHOTOELECTRON EMISSION X-RAYS SEMICONDUCTOR MATERIALS VALENCE BAND BAND STRUCTURE SOLID PHYSICS
- Keyword (es)
- FISICA DEL ESTADO CONDENSADO
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL8130046332
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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