COMPARISON OF THAI'S THEORY WITH EXPERIMENTAL BORON DOPING PROFILES IN SILICON, DIFFUSED FROM BORON NITRIDE SOURCES
- Author
- FROHMADER KP; BAUMBAUER L
UNIV. ERLANGEN-NUERNBERG, LEHRSTUHL TECH. ELEKTRON./ERLANGEN 8520/DEU - Source
- SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 12; PP. 1263-1265; BIBL. 17 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- PASTILLE SEMICONDUCTRICE PROFIL DOPAGE THEORIE ETUDE EXPERIMENTALE FABRICATION DOPAGE SILICIUM IMPURETE BORE ELECTRONIQUE
- Keyword (en)
- DOPING PROFILE THEORY THEORETICAL STUDIES EXPERIMENTAL STUDY DOPING SILICON ELECTRONICS
- Keyword (es)
- ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL8130251526
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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