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A NOVEL BURIED GRID DEVICE FABRICATION TECHNOLOGY

Author
JAYANT BALIGA B
GENERAL ELECTRIC CO./SCHENECTADY NY 12345/USA
Source
IEEE ELECTRON DEVICE LETT.; USA; DA. 1980; VOL. 1; NO 12; PP. 250-252; BIBL. 10 REF.
Document type
Article
Language
English
Keyword (fr)
TRANSISTOR EFFET CHAMP THYRISTOR GRILLE COUCHE ENTERREE SECTION TRANSVERSALE CONFIGURATION RECTANGULAIRE FABRICATION ELECTRONIQUE
Keyword (en)
FIELD EFFECT TRANSISTOR THYRISTOR BURIED LAYER CROSS SECTION(GEOMETRY) RECTANGULAR CONFIGURATION ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL8130370113

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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