PRE- AND POSTEPITAXIAL GETTERING OF OXIDATION AND EPITAXIAL STACKING FAULTS IN SILICON
- Author
- CHEN MC; SILVESTRI VJ
I.B.M., T.J. WATSON RES. CENT./YORKTOWN HEIGHTS NY 10598/USA - Source
- J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 2; PP. 389-395; BIBL. 16 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- NON METAL ELEMENT GROUPE IVB SUPPORT ANNIHILATION DEFAUT ETUDE EXPERIMENTALE COUCHE EPITAXIQUE DEFAUT EMPILEMENT SILICIUM CRISTALLOGRAPHIE
- Keyword (en)
- NON METAL GROUP IVB ELEMENT DEFECT ANNIHILATION EXPERIMENTAL STUDY EPITAXIAL FILM STACKING FAULT SILICON CRISTALLOGRAPHY
- Keyword (es)
- CRISTALOGRAFIA
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL8130405215
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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