DETERMINATION OF THE DRIFT MOBILITY IN HIGH-CONDUCTIVITY AMORPHOUS SILICON
- Author
- CRANDALL RS
RCA LABORATORIES/PRINCETON NJ 08540/USA - Source
- J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 3; PART. 1; PP. 1387-1391; BIBL. 13 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- DIODE DIODE BARRIERE SCHOTTKY ETAT AMORPHE MOBILITE PORTEUR CHARGE COURANT ELECTRIQUE REGIME TRANSITOIRE TENSION POLARISATION TENSION INVERSE PORTEUR CHARGE APPLICATION SILICIUM ELECTRONIQUE PHYSIQUE SOLIDE
- Keyword (en)
- DIODE SCHOTTKY BARRIER DIODE AMORPHOUS STATE CHARGE CARRIER MOBILITY ELECTRICAL CURRENTS UNSTEADY FLOW BIAS VOLTAGE INVERSE VOLTAGE CHARGE CARRIER APPLICATION SILICON ELECTRONICS SOLID PHYSICS
- Keyword (es)
- ELECTRONICA FISICA DEL ESTADO CONDENSADO
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties
- Discipline
- Electronics Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL8130421250
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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