AL048IN052AS/GA047IN053AS/AL048IN052 AS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY WITH LASING WAVELENGTH AT 1.65 MU M
- Author
- TSANG WT
BELL LABORATORIES/MURRAY HILL NJ 07994/USA - Source
- J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 6; PP. 3861-3864; BIBL. 16 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- LASER SEMICONDUCTEUR HETEROJONCTION DOUBLE ALUMINIUM INDIUM ARSENIURE MIXTE LASER IR GALLIUM INDIUM ARSENIURE MIXTE CROISSANCE CRISTALLINE EPITAXIE FAISCEAU MOLECULAIRE OPTIQUE
- Keyword (en)
- ALUMINIUM INDIUM ARSENIDES MIXED GALLIUM INDIUM ARSENIDES MIXED CRYSTAL GROWTH EPITAXY MOLECULAR BEAM OPTICS
- Keyword (es)
- OPTICA
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics
- Discipline
- Theoretical physics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL82X0065489
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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