POWER AND ENERGY LIMITATIONS OF BIPOLAR TRANSISTORS IMPOSED BY THERMAL-MODE AND CURRENT-MODE SECOND-BREAKDOWN MECHANISMS
- Other title
- LIMITATIONS EN PUISSANCE ET EN ENERGIE DE TRANSISTORS BIPOLAIRES IMPOSEES PAR DES PHENOMENES DE "SECONDE DECHARGE" PAR EXCES DE TEMPERATURE ET PAR EXCES DE COURANT (fr)
- Author
- BENNETT WP; KUMBATOVIC RA
RCA SOLID STATE DIVISION/SOMERVILLE NJ 08876/USA - Source
- IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 10; PP. 1154-1162; BIBL. 14 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- TRANSISTOR TRANSISTOR PUISSANCE JONCTION ANALYSE FONCTIONNEMENT ELECTRONIQUE
- Keyword (en)
- TRANSISTOR JUNCTION ELECTRONICS
- Keyword (es)
- ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL82X0106502
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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