A MODIFIED SEM TYPE EB DIRECT WRITING SYSTEM AND ITS APPLICATION ON MOS LSI FABRICATION
- Author
- LIDA Y; MORI K
NIPPON ELECTRIC CO. LTD./KAWASAKI 213/JPN - Source
- J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 11; PP. 2429-2434; BIBL. 11 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- FABRICATION MICROELECTRONIQUE CONCEPTION ASSISTEE RESIST LITHOGRAPHIE FAISCEAU ELECTRON TECHNOLOGIE MOS CIRCUIT LSI MEMOIRE BULLE MAGNETIQUE TRANSISTOR EFFET CHAMP GALLIUM ARSENIURE JONCTION JOSEPHSON APPLICATION ELECTRONIQUE
- Keyword (en)
- MICROELECTRONIC FABRICATION COMPUTER AIDED DESIGN RESIST ELECTRON BEAM LITHOGRAPHY MOS TECHNOLOGY LSI CIRCUIT MEMORY MAGNETIC BUBBLE FIELD EFFECT TRANSISTOR GALLIUM ARSENIDES JOSEPHSON JUNCTION APPLICATION ELECTRONICS
- Keyword (es)
- ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL82X0268661
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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