A NOVEL NORMALLY-OFF CAMEL DIODE GATE GAAS FIELD-EFFECT TRANSISTOR
- Author
- DRUMMOND TJ; WANG T; KOPP W; MORKOC H; THORNE RE; SU SL
UNIV. ILLINOIS, DEP. ELECTRIC. ENG./URBANA IL 61801/USA - Source
- APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 9; PP. 834-836; BIBL. 13 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- TRANSISTOR EFFET CHAMP GRILLE GALLIUM ARSENIURE FABRICATION ANALYSE FONCTIONNEMENT PREPARATION DEPOT METHODE PHASE VAPEUR CONDENSATION FAISCEAU MOLECULAIRE DIODE CHAMEAU ELECTRONIQUE
- Keyword (en)
- FIELD EFFECT TRANSISTOR GRATE GALLIUM ARSENIDES MANUFACTURING OPERATION STUDY PREPARATION DEPOSITION GROWTH FROM VAPOR MOLECULAR BEAM CONDENSATION ELECTRONICS
- Keyword (es)
- ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL82X0273005
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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