DETERMINATION OF THE ELECTRICAL LEVEL OF VACANCY IN ELECTRON IRRADIATED P-TYPE SILICON
- Author
- MUKASHEV BN; FROLOV VV; KOLODIN LG
ACAD. SCI. KASAKH SSR/ALMA-ATA 480082/SUN - Source
- PHYS. LETT. SECT. A; ISSN 0375-9601; NLD; DA. 1982; VOL. 91; NO 7; PP. 358-360; BIBL. 9 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- LACUNE NIVEAU DEFAUT CRISTALLIN IRRADIATION ELECTRON SILICIUM PHYSIQUE SOLIDE
- Keyword (en)
- VACANCY CRYSTAL DEFECT LEVEL IRRADIATION ELECTRONS SOLID PHYSICS
- Keyword (es)
- FISICA DEL ESTADO CONDENSADO
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL83X0029966
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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