FORMATION AND SCHOTTKY BEHAVIOR OF MANGANESE SILICIDES ON N-TYPES SILICON
- Author
- EIZENBERG M; TU KN
IBM T.J. WATSON RES. CENT./YORKTOWN HEIGHTS NY 10598/USA - Source
- J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 10; PP. 6885-6890; BIBL. 26 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- CONTACT ELECTRIQUE CONTACT ISOLANT SEMICONDUCTEUR BARRIERE SCHOTTKY MANGANESE SILICIURE SILICIUM HAUTEUR BARRIERE DIFFRACTION RX ELECTRONIQUE
- Keyword (en)
- ELECTRIC CONTACT SEMICONDUCTOR INSULATOR CONTACT SCHOTTKY BARRIER MANGANESE SILICIDES SILICON BARRIER HEIGHT X RAY DIFFRACTION ELECTRONICS
- Keyword (es)
- ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL83X0079007
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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