LONG-TERM EFFECTS OF INJECTED ELECTRONS IN TUNNEL OXIDE ON THE ELECTRICAL CHARACTERISTICS OF AL GATE/THIN OXIDE/SI STRUCTURES-RELATIVELY LOW OXIDE FIELD CASE
- Author
- NAGAI K; HAYASHI Y
ELECTROTECHNICAL LAB./IBARAKI 305/JPN - Source
- IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 6; PP. 715-717; BIBL. 11 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- STRUCTURE MOS CAPACITE MOS EFFET TUNNEL CARACTERISTIQUE CAPACITE TENSION CARACTERISTIQUE COURANT TENSION INJECTION PORTEUR CHARGE ELECTRONIQUE
- Keyword (en)
- MOS STRUCTURE MOS CAPACITY TUNNEL EFFECT VOLTAGE CAPACITY CURVE VOLTAGE CURRENT CURVE CHARGE CARRIER INJECTION ELECTRONICS
- Keyword (es)
- ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL83X0499013
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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