Polaronic states in Si nanocrystals embedded in SiO₂ matrixMAHDOUANI, M; BOURGUIGA, R; JAZIRI, S et al.Physica. E, low-dimentional systems and nanostructures. 2008, Vol 41, Num 2, pp 228-234, issn 1386-9477, 7 p.Article

Effect of leakage current induced by B⁺H⁺ implantation in the isolation process for self passivated GaAlAs/GaInP/GaAs HBTBOURGUIGA, R; SIK, H; SCAVENNEC, A et al.EPJ. Applied physics (Print). 2002, Vol 19, Num 3, pp 195-199, issn 1286-0042, 5 p.Article

Reduction of space charge recombination current with a self Passivated GaAlAs/GaInP/GaAs HBT structureBOURGUIGA, R; PALMIER, J. F; DUBON-CHEVALLIER, C et al.Journal de physique. III (Print). 1997, Vol 7, Num 11, pp 2153-2157, issn 1155-4320Conference Paper

Direct Extraction Method of HBT Equivalent-Circuit Elements Relying Exclusively on S-Parameters Measured at Normal Bias ConditionsOUDIR, A; MAHDOUANI, M; BOURGUIGA, R et al.IEEE transactions on microwave theory and techniques. 2011, Vol 59, Num 8, pp 1973-1982, issn 0018-9480, 10 p.Article

Modeling of mobility in organic thin-film transistor based octithiophene (8T)MANSOURI, S; HOROWITZ, G; BOURGUIGA, R et al.Synthetic metals. 2010, Vol 160, Num 15-16, pp 1787-1792, issn 0379-6779, 6 p.Article

Extracting parameters from current-voltage characteristics of pentacene field-effect transistor in saturation regionYAKUPHANOGLU, F; MANSOURI, S; BOURGUIGA, R et al.Synthetic metals. 2012, Vol 162, Num 11-12, pp 918-923, issn 0379-6779, 6 p.Article

Modeling of organic thin film field-effect transistors based on pentacene in saturation regime: Effect of light illuminationMANSOURI, S; BOURGUIGA, R; YAKUPHANOGLU, F et al.Microelectronics and reliability. 2012, Vol 52, Num 11, pp 2585-2591, issn 0026-2714, 7 p.Article

The overall device resistance in organic thin film transistor: Application to octithiophene (8T)MANSOURI, S; ZORAI, S; BOURGUIGA, R et al.Synthetic metals. 2012, Vol 162, Num 1-2, pp 231-235, issn 0379-6779, 5 p.Article

Extracting parameters from the current-voltage characteristics of polycrystalline octithiophene thin film field-effect transistorsBOURGUIGA, R; MAHDOUANI, M; MANSOURI, S et al.EPJ. Applied physics (Print). 2007, Vol 39, Num 1, pp 7-16, issn 1286-0042, 10 p.Article

Surface passivation of composition graded base in GaAlAs/GalnP/GaAs heterojunction bipolar transistorBOURGUIGA, R; SIK, H; SCAVEIMEC, A et al.EPJ. Applied physics (Print). 1999, Vol 6, Num 3, pp 299-301, issn 1286-0042Article

Investigation on base surface recombination in Self Passivated GaAlAs/GalnP/GaAs Heterojunction Bipolar TransistorBOURGUIGA, R; SIK, H; SCAVENNEC, A et al.EPJ. Applied physics (Print). 1998, Vol 4, Num 1, pp 27-29, issn 1286-0042Article

Effect of thermal treatments on the properties of PVK/silicon nanowires films for hybrid solar cellsDKHIL, S. Ben; DAVENAS, J; BOURGUIGA, R et al.Synthetic metals. 2011, Vol 161, Num 17-18, pp 1928-1933, issn 0379-6779, 6 p.Article

Analytic model for organic thin film transistors (OTFTs): effect of contact resistances application to the octithiopheneMANSOURI, S; MAHDOUANI, M; OUDIR, A et al.EPJ. Applied physics (Print). 2009, Vol 48, Num 3, issn 1286-0042, 30401.p1-30401.p10Article

Enhancement and red shift of photoluminescence (PL) of fresh porous Si under prolonged laser irradiation or ageing: Role of surface vibration modesGARDELIS, S; NASSIOPOULOU, A. G; MAHDOUANI, M et al.Physica. E, low-dimentional systems and nanostructures. 2009, Vol 41, Num 6, pp 986-989, issn 1386-9477, 4 p.Article

Investigation of Auger recombination in Ge and Si nanocrystals embedded in Si0₂ matrixMAHDOUANI, M; BOURGUIGA, R; JAZIRI, S et al.Physica. E, low-dimentional systems and nanostructures. 2009, Vol 42, Num 1, pp 57-62, issn 1386-9477, 6 p.Article

An analytic procedure for extraction of metallic collector-up InP/InGaAsP/InGaAs HBT small signal equivalent circuit parametersOUDIR, A; MAHDOUANI, M; BOURGUIGA, R et al.Solid-state electronics. 2008, Vol 52, Num 11, pp 1742-1750, issn 0038-1101, 9 p.Article

Auger recombination in silicon nanocrystals embedded in SiO₂wide band-gap latticeMAHDOUANI, M; BOURGUIGA, R; JAZIRI, S et al.Physica status solidi. A, Applications and materials science (Print). 2008, Vol 205, Num 11, pp 2630-2634, issn 1862-6300, 5 p.Conference Paper

Charge transport limited by grain boundaries in polycrystalline octithiophene thin film transistorsBOURGUIGA, R; HOROWITZ, G; GARNIER, F et al.EPJ. Applied physics (Print). 2002, Vol 19, Num 2, pp 117-122, issn 1286-0042, 6 p.Article

Dynamic charge transport in pentacene and zinc oxide thin-film transistors: Dark and UV illumination conditionsMANSOURI, S; BOURGUIGA, R; AL-GHAMDI, A. A et al.Synthetic metals. 2012, Vol 162, Num 17-18, pp 1681-1688, issn 0379-6779, 8 p.Article

Small-signal modeling of Emitter-up HBT using an improved analytical approach. Application to InGaAlAs/GaAsSb/InP DHBT with strained baseOUDIR, A; MAHDOUANI, M; MANSOURI, S et al.Solid-state electronics. 2010, Vol 54, Num 1, pp 67-78, issn 0038-1101, 12 p.Article

Extraction of the InP/lnGaAs metallic collector-up heterojunction bipolar transistor small-signal equivalent circuitBOURGUIGA, R; OUDIR, A; MAHDOUANI, M et al.EPJ. Applied physics (Print). 2008, Vol 42, Num 3, pp 177-186, issn 1286-0042, 10 p.Article

Theory of the organic field-effect transistorHOROWITZ, G; HAJLAOUI, R; BOURGUIGA, R et al.Synthetic metals. 1999, Vol 101, Num 1-3, pp 401-404, issn 0379-6779Conference Paper

Innovative passivated heterojunction bipolar transistor grown by CBEDUBON-CHEVALLIER, C; ALEXANDRE, F; BENCHIMOL, J. L et al.Electronics Letters. 1992, Vol 28, Num 25, pp 2308-2309, issn 0013-5194Article

Influence of the silicon surface treatment on the properties of SiNWs/PVK hybrid solar cellsDKHIL, S. Ben; EBDELLI, R; BOURGUIGA, R et al.Synthetic metals. 2012, Vol 162, Num 13-14, pp 1120-1125, issn 0379-6779, 6 p.Article

Simulation of I-V characteristics of organic thin film transistor : Application to the dihexylquaterthiopheneBOURGUIGA, R; GARNIER, F; HOROWITZ, G et al.EPJ. Applied physics (Print). 2001, Vol 14, Num 2, pp 121-125, issn 1286-0042Article