High purity silicon VIII (Honolulu HI, 3-8 October 2004)Claeys, C.L; Watanabe, M; Falster, R et al.Proceedings - Electrochemical Society. 2004, issn 0161-6374, isbn 1-56677-418-7, XII, 438 p, isbn 1-56677-418-7Conference Proceedings

Defect engineering and control in nanocrystalline siliconMILOVZOROV, D.Proceedings - Electrochemical Society. 2004, pp 226-233, issn 0161-6374, isbn 1-56677-418-7, 8 p.Conference Paper

Status and future development of PDSOI MOSFETsKRISHNAN, Srinatha.Proceedings - Electrochemical Society. 2003, pp 556-565, issn 0161-6374, isbn 1-56677-376-8, 10 p.Conference Paper

Electrodeposition of low-dimensional phases on au studied by EQCM and XRDSHANNON, Curtis.Proceedings - Electrochemical Society. 2003, pp 489-490, issn 0161-6374, isbn 1-56677-376-8, 2 p.Conference Paper

Pairing reactions between substitutional and interstitial defects caused by the same transition metal in silicon float zone crystalsLEMKE, H; IRMSCHER, K.Proceedings - Electrochemical Society. 2004, pp 146-159, issn 0161-6374, isbn 1-56677-418-7, 14 p.Conference Paper

Application of electric current in growing silicon single crystalsWANG, Jong Hoe.Proceedings - Electrochemical Society. 2004, pp 3-11, issn 0161-6374, isbn 1-56677-418-7, 9 p.Conference Paper

Advanced multilevel interconnect technologies for 40-nm Lg devicesOHBA, Takayuki.Proceedings - Electrochemical Society. 2003, pp 183-193, issn 0161-6374, isbn 1-56677-376-8, 11 p.Conference Paper

ULSI process integration IV (Quebec PQ, 16-20 May 2005)Claeys, C.L; Gonzalez, F; Zaima, S et al.Proceedings - Electrochemical Society. 2005, issn 0161-6374, isbn 1-56677-464-0, XIII, 434 p, isbn 1-56677-464-0Conference Proceedings

State of the art in transistorsBOHR, Mark.Proceedings - Electrochemical Society. 2005, pp 3-14, issn 0161-6374, isbn 1-56677-464-0, 12 p.Conference Paper

Current status and future prospects in mixed signal SOCMATSUZAWA, Akira.Proceedings - Electrochemical Society. 2003, pp 107-119, issn 0161-6374, isbn 1-56677-376-8, 13 p.Conference Paper

High-voltage CMOS and scaling trendsBALLAN, H.Proceedings - Electrochemical Society. 2003, pp 288-290, issn 0161-6374, isbn 1-56677-376-8, 3 p.Conference Paper

Logic based embedded dram technologiesMALLARDEAU, Catherine.Proceedings - Electrochemical Society. 2003, pp 133-135, issn 0161-6374, isbn 1-56677-376-8, 3 p.Conference Paper

Process integration on glass substrate by CW laser lateral crystallization (CLC)SASAKI, Nobuo.Proceedings - Electrochemical Society. 2005, pp 259-269, issn 0161-6374, isbn 1-56677-464-0, 11 p.Conference Paper

Cmos scaling and nanoelectronics new materials and processesNISHI, Yoshio.Proceedings - Electrochemical Society. 2005, pp 15-26, issn 0161-6374, isbn 1-56677-464-0, 12 p.Conference Paper

A kinetic model for p-type doping in silicon epitaxy by CVDMEHTA, Bhavesh; MENG TAO.Proceedings - Electrochemical Society. 2004, pp 12-22, issn 0161-6374, isbn 1-56677-418-7, 11 p.Conference Paper

FTIR measurement of nitrogen in silicon using shuttle type sample stageWATANABE, Masaharu; TAKENAWA, Noriaki.Proceedings - Electrochemical Society. 2004, pp 121-131, issn 0161-6374, isbn 1-56677-418-7, 11 p.Conference Paper

Modeling of internal gettering for metal impurities by oxide precipitates in CZ-Si wafersSUEOKA, Koji.Proceedings - Electrochemical Society. 2004, pp 176-187, issn 0161-6374, isbn 1-56677-418-7, 12 p.Conference Paper

ULSI process integration III (Paris, 28 April - 2 May 2003)Claeys, C.L; Gonzales, F; Murota, J et al.Proceedings - Electrochemical Society. 2003, issn 0161-6374, isbn 1-56677-376-8, XVII, 598 p, isbn 1-56677-376-8Conference Proceedings

Plasma technologies for low-k dry etchingTATSUMI, Tetsuya.Proceedings - Electrochemical Society. 2003, pp 206-216, issn 0161-6374, isbn 1-56677-376-8, 11 p.Conference Paper

Single and few electron devices integration trendsGAUTIER, Jacques.Proceedings - Electrochemical Society. 2003, pp 263-265, issn 0161-6374, isbn 1-56677-376-8, 3 p.Conference Paper

Thin film transistors in ULSI -status and futureYUE KUO.Proceedings - Electrochemical Society. 2003, pp 322-329, issn 0161-6374, isbn 1-56677-376-8, 8 p.Conference Paper

High purity silicon VI (Phoenix AZ, 22-27 October 2000)Claeys, C.L; Rai-Choudhury, P; Watanabe, M et al.SPIE proceedings series. 2000, isbn 1-56677-284-2, XIX, 695 p, isbn 1-56677-284-2Conference Proceedings

Atomically controlled CVD technology for future si-based devicesMUROTA, Junichi; SAKURABA, Masao; TILLACK, Bernd et al.Proceedings - Electrochemical Society. 2005, pp 53-66, issn 0161-6374, isbn 1-56677-464-0, 14 p.Conference Paper

Morphology and stress investigations of surface and subsurface regions of plasma hydrogenated and annealed Czochralski siliconJOB, R; MA, Y; HUANG, Y. L et al.Proceedings - Electrochemical Society. 2004, pp 407-418, issn 0161-6374, isbn 1-56677-418-7, 12 p.Conference Paper

Formation mechanism of voids and oxide precipitates in silicon crystalsNAKAMURA, K; SAISHOJI, T; TOMIOKA, J et al.Proceedings - Electrochemical Society. 2004, pp 237-253, issn 0161-6374, isbn 1-56677-418-7, 17 p.Conference Paper