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Hot-carrier reliability in double-implanted lightly doped drain devices for advances DRAMsDITALI, A; FAZAN, P; KHAN, I et al.Electronics Letters. 1992, Vol 28, Num 1, pp 19-21, issn 0013-5194Article

Thin nitride films on textured polyslilicon to increase multimegabit DRAM cell charge capacityFAZAN, P. C; LEE, R. R.IEEE electron device letters. 1990, Vol 11, Num 7, pp 279-281, issn 0741-3106, 3 p.Article

Charge generation in thin SiO2 polysilicon-gate MOS capacitorsFAZAN, P; DUTOIT, M; MARTIN, C et al.Solid-state electronics. 1987, Vol 30, Num 8, pp 829-834, issn 0038-1101Article

Trapping, conduction, and dielectric breakdown in Si3N4 films on As-deposited rugged polysiliconCHAN, H. C; MATHEWS, V; FAZAN, P. C et al.IEEE electron device letters. 1991, Vol 12, Num 9, pp 468-470, issn 0741-3106Article

Physical and electrical characteristics of thin silicon nitride dielectric films deposited on smooth and rugged polycrystalline silicon after rapid thermal nitridationMATHEWS, V. K; DITALI, A; FAZAN, P. C et al.Journal of the Electrochemical Society. 1994, Vol 141, Num 4, pp 1066-1070, issn 0013-4651Article

Hot-carrier reliability characteristics of narrow-width MOSFETsHYUNSANG HWANG; LEE, J; FAZAN, P et al.Solid-state electronics. 1993, Vol 36, Num 4, pp 665-666, issn 0038-1101Article

Transient charge pumping for partially and fully depleted SOI MOSFETsOKHONIN, S; NAGOGA, M; FAZAN, P et al.IEEE International SOI conference. 2002, pp 171-172, isbn 0-7803-7439-8, 2 p.Conference Paper

Hot-carrier-induced degradation of gate dielectrics grown in nitrous oxide under accelerated agingDITALI, A; MATHEWS, V; FAZAN, P et al.IEEE electron device letters. 1992, Vol 13, Num 10, pp 538-540, issn 0741-3106Article

Noise properties and hetero-interface trap in sige-channel PMOSFETSTSUCHIYA, Toshiaki; MUROTA, Junichi.Proceedings - Electrochemical Society. 2003, pp 241-252, issn 0161-6374, isbn 1-56677-376-8, 12 p.Conference Paper

Integration issues with high k gate stacksOSBURN, C. M; HAN, S. K; KINGON, A et al.Proceedings - Electrochemical Society. 2003, pp 375-390, issn 0161-6374, isbn 1-56677-376-8, 16 p.Conference Paper

An analysis of the effect of the steps for isolation formation on STI process integrationPAVAN, Alessia; BRAZZELLI, Daniela; AIELLO, Marta et al.Proceedings - Electrochemical Society. 2003, pp 467-476, issn 0161-6374, isbn 1-56677-376-8, 10 p.Conference Paper

Status and future development of PDSOI MOSFETsKRISHNAN, Srinatha.Proceedings - Electrochemical Society. 2003, pp 556-565, issn 0161-6374, isbn 1-56677-376-8, 10 p.Conference Paper

Sub-quarter-micron pmosfet DC and AC NBTI degradationERHONG LI; PRASAD, Sharad; PARK, Sangjune et al.Proceedings - Electrochemical Society. 2003, pp 408-417, issn 0161-6374, isbn 1-56677-376-8, 10 p.Conference Paper

Defect generation and suppression in device processes using a shallow trench isolation schemePESCHIAROLI, D; BRAMBILLA, M; MICA, I et al.Proceedings - Electrochemical Society. 2003, pp 477-488, issn 0161-6374, isbn 1-56677-376-8, 12 p.Conference Paper

Performance limitations of metal interconnects and possible alternativesSARASWAT PAWAN KAPUR, Krishna C; SOURI, Shukri.Proceedings - Electrochemical Society. 2003, pp 194-205, issn 0161-6374, isbn 1-56677-376-8, 12 p.Conference Paper

Advanced multilevel interconnect technologies for 40-nm Lg devicesOHBA, Takayuki.Proceedings - Electrochemical Society. 2003, pp 183-193, issn 0161-6374, isbn 1-56677-376-8, 11 p.Conference Paper

Emerging silicon-on-nothing (SON) devices technologySKOTNICKI, T; MONFRAY, S; FENOUILLET-BERANGER, C et al.Proceedings - Electrochemical Society. 2003, pp 503-517, issn 0161-6374, isbn 1-56677-376-8, 15 p.Conference Paper

Optimization of ultra-thin body, fully-depleted-SOI device, with raised source/drain or raised extensionEGLEY, J. L; VANDOOREN, Anne; WINSTEAD, Brian et al.Proceedings - Electrochemical Society. 2003, pp 572-577, issn 0161-6374, isbn 1-56677-376-8, 6 p.Conference Paper

The impact of single wafer processing on process integrationSINGH, R; FAKHRUDDIN, M; POOLE, K. F et al.Proceedings - Electrochemical Society. 2003, pp 171-182, issn 0161-6374, isbn 1-56677-376-8, 12 p.Conference Paper

From ambient intelligence to silicon process technologyVAN DER POEL, C. J.Proceedings - Electrochemical Society. 2003, pp 7-14, issn 0161-6374, isbn 1-56677-376-8, 8 p.Conference Paper

Emerging device solutions for the post-classical CMOS eraDE MEYER, Kristin; COLLAERT, Nadine; KUBICEK, Stefan et al.Proceedings - Electrochemical Society. 2003, pp 291-305, issn 0161-6374, isbn 1-56677-376-8, 15 p.Conference Paper

Fully depleted SOI process and device technology for digital and RF applicationsICHIKAWA, F; NAGATOMO, Y; KATAKURA, Y et al.Proceedings - Electrochemical Society. 2003, pp 546-555, issn 0161-6374, isbn 1-56677-376-8, 10 p.Conference Paper

FeRAM technology: Today and futureKUNISHIMA, Iwao; NAGEL, Nicolas.Proceedings - Electrochemical Society. 2003, pp 149-151, issn 0161-6374, isbn 1-56677-376-8, 3 p.Conference Paper

Differential silicide thickness for ULSI scalingTAYLOR, William J; SMITH, James; NGUYEN, Jen-Yee et al.Proceedings - Electrochemical Society. 2003, pp 278-287, issn 0161-6374, isbn 1-56677-376-8, 10 p.Conference Paper

Extremely scaled ultra-thin-body and finfet CMOS devicesBALASUBRAMANIAN, Sdram; CHANG, Leland; CHOI, Yang-Kyu et al.Proceedings - Electrochemical Society. 2003, pp 534-545, issn 0161-6374, isbn 1-56677-376-8, 12 p.Conference Paper

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