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Amorphization by solid-state reaction = Amorphisation par réaction à l'état solideGERL, M; GUILMIN, P.Diffusion and defect data. 1988, Vol 3-4, pp 215-224, issn 0377-6883Conference Paper

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DIFFUSION SOUS CHAMP ELECTRIQUE DANS LES METAUX LIQUIDESGERL M; DU FOU MO; AGNOUX D et al.1975; DGRST-7270358; FR.; DA. 1975; PP. 1-17; H.T. 1; ABS. ANGL.; BIBL. 17 REF.; (RAPP. FINAL, ACTION CONCERTEE: METALL.)Report

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