Source-Connected p-GaN Gate HEMTs for Increased Threshold VoltageHWANG, Injun; OH, Jaejoon; HYUK SOON CHOI et al.IEEE electron device letters. 2013, Vol 34, Num 5, pp 605-607, issn 0741-3106, 3 p.Article

Impacts of fluorine on GaN high electron mobility transistors: Theoretical studyHONG, Ki-Ha; HWANG, Injun; HYUK SOON CHOI et al.Physica status solidi. Rapid research letters (Print). 2010, Vol 4, Num 11, pp 332-334, issn 1862-6254, 3 p.Article

Influence of freelayer in magnetic tunnel junction on switching of submicrometer magnetoresistive random access memory arraysYUN KI LEE; BYONG SUN CHUN; YOUNG KEUN KIM et al.IEEE transactions on magnetics. 2005, Vol 41, Num 2, pp 883-886, issn 0018-9464, 4 p.Conference Paper

Improved selectivity of synthetic anti-ferromagnetic free layer in high-density MRAM arrayHWANG, Injun; JEONG, Woncheol; PARK, Jaehyun et al.IEEE transactions on magnetics. 2005, Vol 41, Num 10, pp 2673-2675, issn 0018-9464, 3 p.Conference Paper

p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate CurrentHWANG, Injun; KIM, Jongseob; SHIN, Jaikwang et al.IEEE electron device letters. 2013, Vol 34, Num 2, pp 202-204, issn 0741-3106, 3 p.Article

Switching characteristics of magnetic tunnel junctions with a synthetic antiferromagnetic free layerYUN KI LEE; BYONG SUN CHUN; YOUNG KEUN KIM et al.IEEE transactions on magnetics. 2005, Vol 41, Num 10, pp 2688-2690, issn 0018-9464, 3 p.Conference Paper