Metalorganic vapor phase epitaxial growth for buried heterostructure GaAlAs lasers with semi-insulating blocking layersOKAYASU, M; KOZEN, A; HASUMI, Y et al.Applied physics letters. 1987, Vol 51, Num 24, pp 1980-1982, issn 0003-6951Article

Metalorganic-vapor-phase-epitaxial growth of Mg-doped Ga_1-xAl_xAs layers and their propertiesKOZEN, A; NOJIMA, S; TENMYO, J et al.Journal of applied physics. 1986, Vol 59, Num 4, pp 1156-1159, issn 0021-8979Article

Self-organization phenomenon of strained InGaAs on InP (311) substrates grown by metalorganic vapor phase epitaxyTEMMYO, J; KOZEN, A; TAMAMURA, T et al.Journal of electronic materials. 1996, Vol 25, Num 3, pp 431-437, issn 0361-5235Conference Paper

Electro-optic characterisation of ultrafast photodetectors using adiabatically compressed soliton pulsesNAGATSUMA, T; YAITA, M; SHINAGAWA, M et al.Electronics Letters. 1994, Vol 30, Num 10, pp 814-816, issn 0013-5194Article

Highly efficient 40 GHz waveguide InGaAs p-i-n photodiode employing multimode waveguide structureKATO, K; HATA, S; KOZEN, A et al.IEEE Photonics technology letters. 1991, Vol 3, Num 9, pp 820-822Article

New ion-implantation method for 4-μm period bubble deviceHYUGA, F; SHINOHARA, M; KOZEN, A et al.IEEE transactions on magnetics. 1984, Vol 20, Num 4, pp 545-546, issn 0018-9464Article

InGaAs/InAlAs multiquantum-well waveguided pin photodiodes with wide tunability and avalanche multiplicationWAKITA, K; KOTAKA, I; KOZEN, A et al.Electronics Letters. 1994, Vol 30, Num 20, pp 1711-1713, issn 0013-5194Article

A high resolution cathodoluminescence microscopy utilizing magnetic fieldWADA, K; KOZEN, A; FUSHIMI, H et al.Japanese journal of applied physics. 1988, Vol 27, Num 10, pp L1952-L1954, issn 0021-4922, 2Article

High-responsivity and low-operation-voltage edge-illuminated refracting-facet photodiodes with large alignment tolerance for single-mode fiberFUKANO, H; KOZEN, A; KATO, K et al.Journal of lightwave technology. 1997, Vol 15, Num 5, pp 894-899, issn 0733-8724Article

AlGaAs epitaxial growth on (111)B substrates by metalorganic vapor-phase epitaxyKATO, K; HASUMI, Y; KOZEN, A et al.Journal of applied physics. 1989, Vol 65, Num 5, pp 1947-1951, issn 0021-8979, 5 p.Article

Cathodoluminescence study of substrate offset effects on interface step structures of quantum wellsWADA, K; KOZEN, A; HASUMI, Y et al.Applied physics letters. 1989, Vol 54, Num 5, pp 436-438, issn 0003-6951, 3 p.Article

A GaAs/AlGaAs double-heterojunction device functioning as a bipolar transistor and injection laser for optoelectronic integrated circuitsHASUMI, Y; KOZEN, A; TEMMYO, J et al.IEEE electron device letters. 1987, Vol 8, Num 1, pp 10-12, issn 0741-3106Article

Reliability of planar waveguide photodiodes for optical subscriber systemsMAWATARI, H; FUKUDA, M; KATO, K et al.Journal of lightwave technology. 1998, Vol 16, Num 12, pp 2428-2434, issn 0733-8724Article

110-GHz, 50%-efficiency mushroom-mesa waveguide p-i-n photodiode for a 1.55-μm wavelengthKATO, K; KOZEN, A; MURAMOTO, Y et al.IEEE photonics technology letters. 1994, Vol 6, Num 6, pp 719-721, issn 1041-1135Article

High-power 0.98 μm GaInAs strained quantum well lasers for Er³⁺-doped fibre amplifierOKAYASU, M; TAKESHITA, T; YAMADA, M et al.Electronics Letters. 1989, Vol 25, Num 23, pp 1563-1565, issn 0013-5194Article

1-μm bubble ion-implanted devices with two-level ion-implanted layers between propagation tracksSHINOHARA, M; HYUGA, F; KOZEN, A et al.IEEE transactions on magnetics. 1985, Vol 21, Num 1, pp 10-13, issn 0018-9464Article

46.5-GHz-bandwidth monolithic receiver OEIC consisting of a waveguide pin photodiode and a distributed amplifierMURAMOTO, Y; TAKAHATA, K; FUKANO, H et al.IEE conference publication. 1997, pp 37-40, issn 0537-9989, isbn 0-85296-697-0, 5VolConference Paper

Sensitivity limits of long-wavelength monolithically integrated p-i-n JFET photoreceiversYOSHIDA, J; AKAHORI, Y; IKEDA, M et al.Journal of lightwave technology. 1996, Vol 14, Num 5, pp 770-779, issn 0733-8724Article

A high-efficienty 50 GHz InGaAs multimode waveguide photodetectorKATO, K; HATA, S; KAWANO, K et al.IEEE journal of quantum electronics. 1992, Vol 28, Num 12, pp 2728-2735, issn 0018-9197Article

High-efficiency waveguide InGaAs pin photodiode with bandwidth of over 40 GHzKATO, K; HATA, S; KOZEN, A et al.IEEE Photonics technology letters. 1991, Vol 3, Num 5, pp 473-474, 2 p.Article

High-speed monolithic receiver OEIC consisting of a waveguide p-i-n photodiode and HEMT'sMURAMOTO, Y; KATO, K; AKAHORI, Y et al.IEEE photonics technology letters. 1995, Vol 7, Num 6, pp 685-687, issn 1041-1135Article

22 GHz photodiode monolithically integrated with optical waveguide on semi-insulating InP using novel butt-joint structureKATO, K; HATA, S; KOZEN, A et al.Electronics Letters. 1992, Vol 28, Num 12, pp 1140-1142, issn 0013-5194Article

Utilisation comme pigment de fluorure de carbone techniqueKOZHUKHOVSKAYA, L. S; YAKOVLEV, P. V; KOZEN, A. L et al.Cement. 1986, Num 5, pp 10-11, issn 0041-4867Article