Quantum conductance, a phase-slip phenomenonLINDELOF, P. E.Physics letters. A. 1988, Vol 132, Num 4, pp 209-210, issn 0375-9601Article

Weak localisation and electron-electron interaction in modulation-doped GaAs/AlGaAs heterostructuresTABORYSKI, R; LINDELOF, P. E.Semiconductor science and technology. 1990, Vol 5, Num 9, pp 933-946, issn 0268-1242, 14 p.Article

Quantum hall samples prepared by helium-ion implantationBRUUS, J; LINDELOF, P. E.IEEE transactions on instrumentation and measurement. 1991, Vol 40, Num 2, pp 225-227, issn 0018-9456, 3 p.Conference Paper

Microwave-enhanced phase-relaxation observed in weak-localization experiments = Relaxation de phase augmentée par microonde observée dans des expériences de faible localisationSHIGUANG WANG; LINDELOF, P. E.Physical review letters. 1987, Vol 59, Num 10, pp 1156-1159, issn 0031-9007Article

Quantum Hall metrology samples and their use for resistance calibrationBRUUS, H; LINDELOF, P. E.Physica scripta (Print). 1991, Vol 44, Num 5, pp 418-426, issn 0031-8949Article

Bulk and surface spin-orbit relaxation of the conduction electrons separated by weak-localization experiments = Relaxation spin-orbite en volume et en surface des électrons de conduction séparée par des expériences de faible localisationLINDELOF, P. E; SHIGUANG WANG.Physical review. B, Condensed matter. 1986, Vol 33, Num 2, pp 1478-1481, issn 0163-1829Article

Weak localization experiments on magnesium films: effects of substrate, ion implantation, microwaves, temperature, and resistivity/thickness on the phase and spin-orbit relaxation = Expériences de faible localisation sur les couches minces de magnésium: effets du support, de l'implantation ionique, des microondes, de la température et de la résistivité/épaisseur sur la phase et la relaxation spin-orbiteSHIGUANG WANG; LINDELOF, P. E.Journal of low temperature physics. 1988, Vol 71, Num 5-6, pp 403-444, issn 0022-2291Article

The quantised Hall resistance and the Josephson effectLINDELOF, P. E; HANSEN, O. P.Journal of physics. C. Solid state physics. 1983, Vol 16, Num 33, pp L1185-L1186, issn 0022-3719Article

Quantum corrections to conductivity observed at intermediate magnetic fields in a high-mobility GaAs/Al_xGa_1-xAs two-dimensional electron gasTABORYSKI, R; VEJE, E; LINDELOF, P. E et al.Physical review. B, Condensed matter. 1990, Vol 41, Num 5, pp 3287-3290, issn 0163-1829Article

Formation of sharp potential minima close to a quantum point contact by impinging alpha particlesTABORYSKI, R; BAKLANOV, K; LINDELOF, P. E et al.Physical review letters. 1993, Vol 70, Num 16, pp 2475-2478, issn 0031-9007Article

Static and dynamic interactions between Josephson junctionsBINDSLEV HANSEN, J; LINDELOF, P. E.Reviews of modern physics. 1984, Vol 56, Num 3, pp 431-459, issn 0034-6861Article

Weak localization in a GaAs heterostructure close to population of the second subbandHANSEN, J. E; TABORYSKI, R; LINDELOF, P. E et al.Physical review. B, Condensed matter. 1993, Vol 47, Num 23, pp 16040-16043, issn 0163-1829Article

Vector-asymmetry of the quantum point contact conductanceTABORYSKI, R; GEIM, A. K; LINDELOF, P. E et al.Superlattices and microstructures. 1992, Vol 12, Num 1, pp 137-140, issn 0749-6036Article

Localization and interaction effects in GaAs/AlGaAs heterostructures modified by ⁴He-ion implantationTABORYSKI, R; VEJE, E; LINDELOF, P. E et al.Surface science. 1990, Vol 229, Num 1-3, pp 105-109, issn 0039-6028, 5 p.Conference Paper

Observation of the i=1/2 fractional quantum Hall plateau in AlGaAs/GaAs/AlGaAs selectively doped double heterostructuresLINDELOF, P. E; BRUUS, H; TABORYSKI, R et al.Semiconductor science and technology. 1989, Vol 4, Num 10, pp 858-865, issn 0268-1242, 8 p.Article

The voltage limitation for phase coherence experiments : non-equilibrium effects versus Joule heatingLINKE, H; OMLING, P; XU, H et al.Superlattices and microstructures. 1996, Vol 20, Num 4, pp 441-445, issn 0749-6036Article

Resonant tunnelling in superlattices with a basisKRISTENSEN, A; LINDELOF, P. E; SØRENSEN, C. B et al.Semiconductor science and technology. 1998, Vol 13, Num 8, pp 910-914, issn 0268-1242Article

Integration of carbon nanotubes with semiconductor technology : fabrication of hybrid devices by III-V molecular beam epitaxySTOBBE, S; LINDELOF, P. E; NYGARD, J et al.Semiconductor science and technology. 2006, Vol 21, Num 11, issn 0268-1242, S10-S16Article

Quantized acoustoelectric current in the presence of large tunneling counterflowGLOOS, K; UTKO, P; HANSEN, J. Bindslev et al.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 23, pp 235345.1-235345.7, issn 1098-0121Article

Fluxoid quantization in quantum dots with Landau level edge statesKRISTENSEN, A; KENNEDY, C. J; LINDELOF, P. E et al.Semiconductor science and technology. 1995, Vol 10, Num 10, pp 1315-1322, issn 0268-1242Article

Shell structure of a circular quantum dot in weak magnetic fieldsREIMANN, S. M; PERSSON, M; LINDELOF, P. E et al.Zeitschrift für Physik. B, Condensed matter. 1996, Vol 101, Num 3, pp 377-385, issn 0722-3277Article

A technique for positioning nanoparticles using an atomic force microscopeHANSEN, L. T; KÜHLE, A; SØRENSEN, A. H et al.Nanotechnology (Bristol. Print). 1998, Vol 9, Num 4, pp 337-342, issn 0957-4484Article

Resonant tunnelling between edge states in mesoscopic wiresGEIM, A. K; MAIN, P. C; BROWN, C. V et al.Surface science. 1994, Vol 305, Num 1-3, pp 624-628, issn 0039-6028Conference Paper

Multiple Andreev reflections in diffusive SNS structuresTABORYSKI, R; KUTCHINSKY, J; HANSEN, J. B et al.Superlattices and microstructures. 1999, Vol 25, Num 5-6, pp 829-837, issn 0749-6036Article

Optical properties of GaAs/AlAs superlattices with a basisKRISTENSEN, A; LINDELOF, P. E; SMITH, H et al.Superlattices and microstructures. 1992, Vol 12, Num 3, pp 297-300, issn 0749-6036Article