A NEW CIRCUIT CONFIGURATION FOR A SINGLE-TRANSISTOR CELL USING AL-GATE TECHNOLOGY WITH REDUCED DIMENSIONS.MEUSBURGER G.1977; I.E.E.E.J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1977; VOL. 12; NO 3; PP. 253-257; BIBL. 9 REF.Article

DURCH SCHALTUNGSMASSNAHMEN ERHOEHTE SPEICHERZEIT BEIM EIN-TRANSISTOR-SPEICHERELEMENT. = AUGMENTATION, PAR DES MODIFICATIONS DE CIRCUIT, DU TEMPS DE STOCKAGE D'UN ELEMENT DE MEMOIRE A UN SEUL TRANSISTORMEUSBURGER G.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 6; PP. 140-141; ABS. ANGL.; BIBL. 5 REF.Article

SEM STROBOSCOPY FOR THE EVALUATION OF IC OPERATING FUNCTIONS IN THE SUBNANOSECOND RANGEHIEKE E; MEUSBURGER G.1978; REV. SCI. INSTRUM.; USA; DA. 1978; VOL. 49; NO 6; PP. 802-805; BIBL. 14 REF.Article

SCALING OF N-MOS DEVICES: EXPERIMENTAL VERIFICATION OF AN LSI CONCEPT.MEUSBURGER G; SIGUSCH R.1976; SIEMENS FORSCH.-U. ENTWICKL.-BER.; DTSCH.; DA. 1976; VOL. 5; NO 6; PP. 332-337; ABS. ALLEM.; BIBL. 20 REF.Article

A NEW CIRCUIT CONFIGURATION FOR A STATIC MEMORY CELL WITH AN AREA OF 880 UM2SCHRADER L; MEUSBURGER G.1978; I.E.E.E. J. SOLID-STATE CIRCUITS; USA; DA. 1978; VOL. 13; NO 3; PP. 345-351; BIBL. 6 REF.Article