TEMPERATURE DEPENDENCE OF 1.98 EV PHOTOLUMINESCENCE BAND IN CD_1-XMN_XTE SEMICONDUCTOR ALLOYSMORIWAKI MM; BECKER WM; GEBHARDT W et al.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 39; NO 2; PP. 367-369; BIBL. 12 REF.Article

STUDY OF THE 2.0-EV PHOTOLUMINESCENCE BAND IN CD_1-XMN_XTE SEMICONDUCTOR ALLOYSMORIWAKI MM; BECKER WM; GEBHARDT W et al.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 26; NO 6; PP. 3165-3171; BIBL. 31 REF.Article

COMPARISON OF EXCITATION SPECTRA OF 1.2- AND 2-0-EV PHOTOLUMINESCENCE BANDS IN CD_1-XMN_XTE FOR 0.4<X<0.7TAO RY; MORIWAKI MM; BECKER WM et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 5; PP. 3772-3776; BIBL. 23 REF.Article