DEEP LEVELS IN CW LASER-CRYSTALLIZED SILICON THIN FILMSJOHNSON NM; MOYER MD; FENNELL LE et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 6; PP. 560-563; BIBL. 19 REF.Article

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GRAIN BOUNDARIES IN P-N JUNCTION DIODES FABRICATED IN LASER-RECRYSTALLIZED SILICON THIN FILMSJOHNSON NM; BIEGELSEN DK; MOYER MD et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 11; PP. 900-902; BIBL. 7 REF.Article

SINGH-CRYSTAL SILICON TRANSISTORS IN LASER-CRYSTALLIZED THIN FILMS ON BULK GLASSJOHNSON NM; BIEGELSEN DK; TUAN HC et al.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 12; PP. 369-372; BIBL. 22 REF.Article

LASER-INDUCED CRYSTALLIZATION OF SILICON ISLANDS ON AMORPHOUS SUBSTRATES: MULTILAYER STRUCTURESBIEGELSEN DK; JOHNSON NM; BARTELINK DJ et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 3; PP. 150-152; BIBL. 6 REF.Article

DEUTERIUM AT THE SI-SIO₂ INTERFACE DETECTED BY SECONDARY-ION MASS SPECTROMETRYJOHNSON NM; BIEGELSEN DK; MOYER MD et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 12; PP. 995-997; BIBL. 9 REF.Article