ELECTRICAL CHARACTERISTICS OF HEAVILY ARSENIC AND PHOSPHORUS DOPED POLYCRYSTALLINE SILICONMUROTA J; SAWAI T.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 5; PP. 3702-3708; BIBL. 24 REF.Article

CHANGES IN THICKNESS AND INFRARED SPECTRUM OF PHOSPHOSILICATE GLASS FILM WITH HEAT-TREATMENT IN H₂ GASTAKEUCHI H; MUROTA J.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 3; PP. 752-754; BIBL. 6 REF.Article

ARSENIC DOPING OF CHEMICAL VAPOR DEPOSITED POLYCRYSTALLINE SILICON USING SIH₄-H₂-ASH₃ GAS SYSTEMMUROTA J; ARAI E; KUDO K et al.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 5; PP. 1188-1192; BIBL. 22 REF.Article

Noise properties and hetero-interface trap in sige-channel PMOSFETSTSUCHIYA, Toshiaki; MUROTA, Junichi.Proceedings - Electrochemical Society. 2003, pp 241-252, issn 0161-6374, isbn 1-56677-376-8, 12 p.Conference Paper

Integration issues with high k gate stacksOSBURN, C. M; HAN, S. K; KINGON, A et al.Proceedings - Electrochemical Society. 2003, pp 375-390, issn 0161-6374, isbn 1-56677-376-8, 16 p.Conference Paper

An analysis of the effect of the steps for isolation formation on STI process integrationPAVAN, Alessia; BRAZZELLI, Daniela; AIELLO, Marta et al.Proceedings - Electrochemical Society. 2003, pp 467-476, issn 0161-6374, isbn 1-56677-376-8, 10 p.Conference Paper

Status and future development of PDSOI MOSFETsKRISHNAN, Srinatha.Proceedings - Electrochemical Society. 2003, pp 556-565, issn 0161-6374, isbn 1-56677-376-8, 10 p.Conference Paper

Sub-quarter-micron pmosfet DC and AC NBTI degradationERHONG LI; PRASAD, Sharad; PARK, Sangjune et al.Proceedings - Electrochemical Society. 2003, pp 408-417, issn 0161-6374, isbn 1-56677-376-8, 10 p.Conference Paper

Defect generation and suppression in device processes using a shallow trench isolation schemePESCHIAROLI, D; BRAMBILLA, M; MICA, I et al.Proceedings - Electrochemical Society. 2003, pp 477-488, issn 0161-6374, isbn 1-56677-376-8, 12 p.Conference Paper

Performance limitations of metal interconnects and possible alternativesSARASWAT PAWAN KAPUR, Krishna C; SOURI, Shukri.Proceedings - Electrochemical Society. 2003, pp 194-205, issn 0161-6374, isbn 1-56677-376-8, 12 p.Conference Paper

Advanced multilevel interconnect technologies for 40-nm Lg devicesOHBA, Takayuki.Proceedings - Electrochemical Society. 2003, pp 183-193, issn 0161-6374, isbn 1-56677-376-8, 11 p.Conference Paper

Emerging silicon-on-nothing (SON) devices technologySKOTNICKI, T; MONFRAY, S; FENOUILLET-BERANGER, C et al.Proceedings - Electrochemical Society. 2003, pp 503-517, issn 0161-6374, isbn 1-56677-376-8, 15 p.Conference Paper

Optimization of ultra-thin body, fully-depleted-SOI device, with raised source/drain or raised extensionEGLEY, J. L; VANDOOREN, Anne; WINSTEAD, Brian et al.Proceedings - Electrochemical Society. 2003, pp 572-577, issn 0161-6374, isbn 1-56677-376-8, 6 p.Conference Paper

The impact of single wafer processing on process integrationSINGH, R; FAKHRUDDIN, M; POOLE, K. F et al.Proceedings - Electrochemical Society. 2003, pp 171-182, issn 0161-6374, isbn 1-56677-376-8, 12 p.Conference Paper

STEPPED ELECTRODE TRANSISTOR: SET.SAKAI T; SUNOHARA Y; SAKAKIBARA Y et al.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; SUPPL. 1; PP. 43-46; BIBL. 1 REF.; (CONF. SOLID STATE DEVICES. 8. PROC.; TOKYO; 1976)Conference Paper

SiGe : materials, processing, and devices (Honolulu HI, 3-8 October 2004)Harame, D; Boquet, J; Cressler, J et al.Proceedings - Electrochemical Society. 2004, issn 0161-6374, isbn 1-56677-420-9, XVII, 1195 p, isbn 1-56677-420-9Conference Proceedings

From ambient intelligence to silicon process technologyVAN DER POEL, C. J.Proceedings - Electrochemical Society. 2003, pp 7-14, issn 0161-6374, isbn 1-56677-376-8, 8 p.Conference Paper

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Fully depleted SOI process and device technology for digital and RF applicationsICHIKAWA, F; NAGATOMO, Y; KATAKURA, Y et al.Proceedings - Electrochemical Society. 2003, pp 546-555, issn 0161-6374, isbn 1-56677-376-8, 10 p.Conference Paper

FeRAM technology: Today and futureKUNISHIMA, Iwao; NAGEL, Nicolas.Proceedings - Electrochemical Society. 2003, pp 149-151, issn 0161-6374, isbn 1-56677-376-8, 3 p.Conference Paper

Differential silicide thickness for ULSI scalingTAYLOR, William J; SMITH, James; NGUYEN, Jen-Yee et al.Proceedings - Electrochemical Society. 2003, pp 278-287, issn 0161-6374, isbn 1-56677-376-8, 10 p.Conference Paper

Extremely scaled ultra-thin-body and finfet CMOS devicesBALASUBRAMANIAN, Sdram; CHANG, Leland; CHOI, Yang-Kyu et al.Proceedings - Electrochemical Society. 2003, pp 534-545, issn 0161-6374, isbn 1-56677-376-8, 12 p.Conference Paper

A NOVEL MOS PROM USING A HIGHLY RESISTIVE POLY-SI RESISTORTANIMOTO M; MUROTA J; OHMORI Y et al.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 3; PP. 517-520; BIBL. 7 REF.Article

Trench coverage characteristics of polysilicon deposited by thermal decomposition of silaneMORIE, T; MUROTA, J.Japanese journal of applied physics. 1984, Vol 23, Num 7, pp L482-L484, issn 0021-4922Article

RELATIONSHIP BETWEEN TOTAL ARSENIC AND ELECTRICALLY ACTIVE ARSENIC CONCENTRATIONS IN SILICON PRODUCED BY THE DIFFUSION PROCESSMUROTA J; ARAI E; KOBAYASHI K et al.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 2; PP. 804-808; BIBL. 19 REF.Article