5-THz bandwidth from a GaAs-on-silicon photoconductive receiverPEDERSEN, J. E; KEIDING, S. R; SØRENSEN, C. B et al.Journal of applied physics. 1993, Vol 74, Num 11, pp 7022-7024, issn 0021-8979Article

Observation of the i=1/2 fractional quantum Hall plateau in AlGaAs/GaAs/AlGaAs selectively doped double heterostructuresLINDELOF, P. E; BRUUS, H; TABORYSKI, R et al.Semiconductor science and technology. 1989, Vol 4, Num 10, pp 858-865, issn 0268-1242, 8 p.Article

MBE growth of two-dimensional electron gases on (110) GaAsSØRENSEN, C. B; GISLASON, H; HVAM, J. M et al.Journal of crystal growth. 1997, Vol 175-76, pp 1097-1101, issn 0022-0248, 2Conference Paper

Determination of the disulphide bridge arrangement of bovine histidine-rich glycoproteinSØRENSEN, C. B; KROGH-PEDERSEN, H; PETERSEN, T. E et al.FEBS letters. 1993, Vol 328, Num 3, pp 285-290, issn 0014-5793Article

Ultrafast local field dynamics in photoconductive THz antennasPEDERSEN, J. E; LYSSENKO, V. G; HVAM, J. M et al.Applied physics letters. 1993, Vol 62, Num 11, pp 1265-1267, issn 0003-6951Article

Macro nutrient cation uptake by plants. I: Rate-determining steps in net inflow of cations into intact and decapitated sunflower plants and intensity factors of cations in soil solutionNIELSEN, N. E; SØRENSEN, C. B.Plant and soil. 1984, Vol 77, Num 2-3, pp 337-346, issn 0032-079XArticle

Multiple Andreev reflections in diffusive SNS structuresTABORYSKI, R; KUTCHINSKY, J; HANSEN, J. B et al.Superlattices and microstructures. 1999, Vol 25, Num 5-6, pp 829-837, issn 0749-6036Article

Optical properties of GaAs/AlAs superlattices with a basisKRISTENSEN, A; LINDELOF, P. E; SMITH, H et al.Superlattices and microstructures. 1992, Vol 12, Num 3, pp 297-300, issn 0749-6036Article

Identification of novel and known mutations in the genes for keratin 5 and 14 in Danish patients with epidermolysis bullosa simplex : Correlation between genotype and phenotypeSØRENSEN, C. B; LADEKJAER-MIKKEISEN, A.-S; BOLUND, L et al.Journal of investigative dermatology. 1999, Vol 112, Num 2, pp 184-190, issn 0022-202XArticle

Non-linear flight dynamics at high angles-of-attackGRANASV, P; SØRENSEN, C. B; MOSEKILDE, E et al.Aeronautical Journal. 1998, Vol 102, Num 1016, pp 337-343, issn 0001-9240Article

Resonant tunnelling in superlattices with a basisKRISTENSEN, A; LINDELOF, P. E; SØRENSEN, C. B et al.Semiconductor science and technology. 1998, Vol 13, Num 8, pp 910-914, issn 0268-1242Article

Superconductor-semiconductor-superconductor planar junctions of aluminium on δ-doped gallium-arsenideTABORYSKI, R; CLAUSEN, T; KUTCHINSKY, J et al.IEEE transactions on applied superconductivity. 1997, Vol 7, Num 2, pp 2809-2813, issn 1051-8223, 3Conference Paper

Aharonov-Bohm effect in GaAs/GaAlAs ring interferometersPEDERSEN, S; HANSEN, A. E; KRISTENSEN, A et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 234-238, issn 0921-5107Conference Paper

Bias voltage dependence of a flux-sensitive Al/GaAs/Al (SNS) interferometerKUTCHINSKY, J; TABORYSKI, R; HANSEN, J. B et al.IEEE transactions on applied superconductivity. 1999, Vol 9, Num 2, pp 4249-4252, issn 1051-8223, 3Conference Paper

Experimental determination of the GaAs and Ga_1-xAl_xAs band-gap energy dependence on temperature and aluminium mole fraction in the direct band-gap regionEL ALLALI, M; SØRENSEN, C. B; VEJE, E et al.Physical review. B, Condensed matter. 1993, Vol 48, Num 7, pp 4398-4404, issn 0163-1829Article

Two-dimensional electron transport studied by electroluminescenceEL ALLALI, M; SØRENSEN, C. B; VEJE, E et al.Superlattices and microstructures. 1992, Vol 12, Num 3, pp 283-286, issn 0749-6036Article

A photoluminescence study of δ-doped GaAsEL ALLALI, M; VEJE, E; SORENSEN, C. B et al.Journal de physique. IV. 1993, Vol 3, Num 5, pp 299-302, issn 1155-4339Conference Paper

MBE growth and characterization of high purity GaAs/AlGaAs on the (110) surface of GaAsSORENSEN, C. B; GISLASON, H; BIRKEDAL, D et al.Microelectronics journal. 1995, Vol 26, Num 8, pp 767-773, issn 0959-8324Conference Paper

Thermoactivated conductivity in p-GaAs/Al0.5Ga0.5As below 5 k under combined influence of illumination and uniaxial stressKRAAK, W; MININA, N. Ya; ILIEVSKY, A. A et al.Physica status solidi. B. Basic research. 2003, Vol 235, Num 2, pp 390-395, issn 0370-1972, 6 p.Conference Paper

Impurity-related emission in the photoluminescence from p-type modulation doped Al_1-xGa_xAs/GaAs heterostructuresBRYJA, L; KUBISA, M; RYCZKO, K et al.Solid state communications. 2002, Vol 122, Num 7-8, pp 379-384, issn 0038-1098Article

Excitons at the p-type modulation doped Al_0.5Ga_0.5As/GaAs interfaceBRYJA, L; RYCZKO, K; KUBISA, M et al.SPIE proceedings series. 2001, pp 16-20, isbn 0-8194-4116-3Conference Paper

Persistent photoconductivity in p-type Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As heterostructuresKRAAK, W; MININA, N. Ya; SAVIN, A. M et al.Nanotechnology (Bristol. Print). 2001, Vol 12, Num 4, pp 577-580, issn 0957-4484Conference Paper

Temperature dependence of the breakdown of the quantum Hall effect studied by induced currentsMATTHEWS, A. J; KAVOKIN, K. V; SIMMONS, M. Y et al.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 7, pp 075317.1-075317.8, issn 1098-0121Article