In situ optical studies of metal depositionSUNI, I. I.Journal of applied electrochemistry. 1997, Vol 27, Num 11, pp 1219-1231, issn 0021-891XArticle

The mechanism of surface heterodiffusion at elevated temperaturesSUNI, I. I.Surface science. 1996, Vol 349, Num 3, pp L179-L183, issn 0039-6028Article

CONTACT RESISTIVITY OF TIN P⁺-SI AND N⁺-SIFINETTI M; SUNI I; NICOLET MA et al.1983; SOLAR CELLS; ISSN 0379-6787; CHE; DA. 1983; VOL. 9; NO 3; PP. 179-183; BIBL. 9 REF.Article

CONTACT RESISTIVITIES OF SPUTTERED TIN AND TI-TIN METALLIZATIONS ON SOLAR-CELL-TYPE-SILICONMAEENPAA M; NICOLET MA; SUNI I et al.1981; SOL. ENERGY; ISSN 0038-092X; USA; DA. 1981; VOL. 27; NO 4; PP. 283-287; BIBL. 25 REF.Article

INTERDIFFUSION OF THIN BILAYERS OF COPPER AND NICKEL = INTERDIFFUSION DE BICOUCHES MINCES DE CUIVRE ET DE NICKELSUNI I; NICOLET MA; MAEENPAEA M et al.1981; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1981; VOL. 79; NO 1; PP. 69-73; BIBL. 9 REF.Article

Effect of three-body dispersion interactions on the surface dynamics of Ar(111)SUNI, I. I.Surface science. 1997, Vol 391, Num 1-3, pp L1212-L1216, issn 0039-6028Article

COMPENSATING IMPURITY EFFECT ON EPITAXIAL REGROWTH RATE OF AMORPHIZED SISUNI I; GOELTZ G; GRIMALDI MG et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 3; PP. 269-271; BIBL. 14 REF.Article

Atomic force microscopy of Au deposition from aqueous HF onto Si(111)ROSSITER, C; SUNI, I. I.Surface science. 1999, Vol 430, Num 1-3, pp L553-L557, issn 0039-6028Article

Differential capacitance studies of the specific adsorption of thiosulfate on silverSRINIVASAN, R; SUNI, I. I.Journal of applied electrochemistry. 1998, Vol 28, Num 9, pp 993-998, issn 0021-891XArticle

An optical method for monitoring metal contamination during aqueous processing of silicon wafersCHOPRA, D; SUNI, I. I.Journal of the Electrochemical Society. 1998, Vol 145, Num 5, pp 1688-1692, issn 0013-4651Article

Electroless deposition of Au onto Si(111) studied by surface second harmonic generationSRINIVASAN, R; SUNI, I. I.Surface science. 1998, Vol 408, Num 1-3, pp L698-L702, issn 0039-6028Article

ELECTRICAL CHARACTERISTICS OF AMORPHOUS IRON-TUNGSTEN CONTACTS ON SILICONFINETTI M; PAN ETS; SUNI I et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 11; PP. 987-989; BIBL. 18 REF.Article

Angular-radial coupling in the tunneling motion of (HCCH)₂SUNI, I. I; KLEMPERER, W.The Journal of chemical physics. 1993, Vol 98, Num 2, pp 988-997, issn 0021-9606Article

STABLE METALLIZATION SYSTEMS FOR SOLAR CELLSMAEENPAEAE M; SUNI I; SIGURD D et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 72; NO 2; PP. 763-769; ABS. FRE; BIBL. 21 REF.Article

THERMAL OXIDATION OF SPUTTERED TIN DIFFUSION BARRIERSSIGURD D; SUNI I; WIELUNSKI L et al.1981; SOL. CELLS; ISSN 0379-6787; CHE; DA. 1981; VOL. 5; NO 1; PP. 81-86; BIBL. 14 REF.Article

Cu dissolution from Si(111) into an SC-1 process solutionCHOPRA, D; SUNI, I. I; BUSNAINA, A. A et al.Journal of the Electrochemical Society. 1998, Vol 145, Num 4, pp L60-L61, issn 0013-4651Article

The rotational spectrum, internal rotation, and structure of H₂O-NCCN and D₂O-NCCNLEE, S; SUNI, I. I; KLEMPERER, W et al.The Journal of chemical physics. 1992, Vol 96, Num 8, pp 5577-5584, issn 0021-9606Article

Amorphous metallic alloys in semiconductor contact metallizationsNICOLET, M.-A; SUNI, I; FINETTI, M et al.Solid state technology. 1983, Vol 26, Num 12, pp 129-133, issn 0038-111XArticle

Recrystallization of amorphous silicon layers on sapphirePAI, C. S; LAU, S. S; SUNI, I et al.Thin solid films. 1983, Vol 109, Num 3, pp 263-281, issn 0040-6090Article

Surface self diffusion at high temperatures : new simulational insightsSUNI, I. I; SEEBAUER, E. G.Thin solid films. 1996, Vol 272, Num 2, pp 229-234, issn 0040-6090Article

A new physical picture for surface diffusion at high temperaturesSUNI, I. I; SEEBAUER, E. H.Surface science. 1994, Vol 301, Num 1-3, pp L235-L238, issn 0039-6028Article

Ohmic contact resistance evaluation in silicon planar structures: application to the CoSi₂/n+Si interfaceSCORZONI, A; FINETTI, M; SONCINI, G et al.Alta frequenza. 1987, Vol 56, Num 8, pp 341-345, issn 0002-6557Article

Use of a TiN barrier to improve GaAs FET ohmic contact reliabilityREMBA, R. D; SUNI, I; NICOLET, M.-A et al.IEEE electron device letters. 1985, Vol 6, Num 8, pp 437-438, issn 0741-3106Article

Substrate orientation dependence of enhanced epitaxial regrowth of siliconHO, K. T; SUNI, I; NICOLET, M.-A et al.Journal of applied physics. 1984, Vol 56, Num 4, pp 1207-1212, issn 0021-8979Article

Investigation of ionic contamination removal from silicon dioxide surfacesLIN, H; BUSNAINA, A. A; SUNI, I. I et al.Surface engineering. 2002, Vol 18, Num 3, pp 233-236, issn 0267-0844Article