Atomic layer epitaxy : 12 years laterHERMAN, M. A.Vacuum. 1990, Vol 42, Num 1-2, pp 61-66, issn 0042-207X, 6 p.Conference Paper

Shadow electron beam 1 : 1 scale printing with 0.1 μm size elementsMAKHMUTOV, R. K; SIDORUK, S. N; VALIEV, K. A et al.Vacuum. 1990, Vol 42, Num 1-2, pp 133-137, issn 0042-207XConference Paper

Sputtering of silicon dioxide near thresholdTODOROV, S. S; FOSSUM, E. R.Applied physics letters. 1988, Vol 52, Num 5, pp 365-367, issn 0003-6951Article

On the mechanism of sputtering of SiO₂ by Ar at ion energies near the sputtering thresholdTODOROV, S. S; CHAKAROV, I. R.Vacuum. 1989, Vol 39, Num 11-12, pp 1101-1103, issn 0042-207XConference Paper

Oxidation of silicon by a low-energy ion beam: experiment and modelTODOROV, S. S; FOSSUM, E. R.Applied physics letters. 1988, Vol 52, Num 1, pp 48-50, issn 0003-6951Article

A comprehensive SIMS study of high-T_c superconductorsCHENAKIN, S. P.Vacuum. 1990, Vol 42, Num 1-2, pp 139-142, issn 0042-207X, 4 p.Conference Paper

A low working pressure magnetron sputtering sourceKOSTADINOV, L; DOBREV, D.Vacuum. 1990, Vol 42, Num 1-2, pp 35-37, issn 0042-207XConference Paper

Focused ion beam technologyGAMO, K.Vacuum. 1990, Vol 42, Num 1-2, pp 89-93, issn 0042-207XConference Paper

Power dissipation in rf glow dischargesDELTCHEV, R; ALBERT, M; SUCHANECK, G et al.Vacuum. 1990, Vol 42, Num 1-2, pp 33-34, issn 0042-207XConference Paper

Sources of high power ion beams for technological applicationsISAKOV, I. F; KOLODII, V. N; OPEKUNOV, M. S et al.Vacuum. 1990, Vol 42, Num 1-2, pp 159-162, issn 0042-207XConference Paper

Ion beam deposition of ¹⁰⁷Ag(111) films on Ni(100)TODOROV, S. S; BU, H; BOYD, K. J et al.Surface science. 1999, Vol 429, Num 1-3, pp 63-70, issn 0039-6028Article

Buried Si₃N₄ layers in silicon produced by high-intensity implantation and rapid thermal annealingGRIBKOVSKII, R. V; KOMAROV, F. F; NOVIKOV, A. P et al.Vacuum. 1990, Vol 42, Num 1-2, pp 111-112, issn 0042-207X, 2 p.Conference Paper

Dependence of collisional mixing on recoil energyHAUTALA, M; KOPONEN, I.Vacuum. 1990, Vol 42, Num 1-2, pp 3-7, issn 0042-207X, 5 p.Conference Paper

Fast atom and beam etching assisted by a fluorine-containing radical flowGORBATOV, Y. B; ZINENKO, V. I; VYATKIN, A. F et al.Vacuum. 1990, Vol 42, Num 1-2, pp 121-124, issn 0042-207X, 4 p.Conference Paper

The determination of species distributions and deduction of mixing and effective diffusion parameters in the altered layer of irradiated filmsNOBES, M. J; CARTER, G; KATARDJIEV, I. V et al.Vacuum. 1990, Vol 42, Num 1-2, pp 21-27, issn 0042-207X, 7 p.Conference Paper

Problems of scanning Auger electron microscopyFRANK, L.Vacuum. 1990, Vol 42, Num 1-2, pp 147-150, issn 0042-207XConference Paper

Computer simulation of ion-bombardment induced sputtering of Rh(111) surface = Simulation sur ordinateur de la pulvérisation d'une surface de Rh(111) induite par bombardement ioniqueCHAKAROV, I. R; KARPUZOV, D. S; TODOROV, S. S et al.Vacuum. 1989, Vol 39, Num 11-12, pp 1123-1126, issn 0042-207XConference Paper

Proceedings/5th Bulgarian summer school of vacuum, electron and ion technologies, 6-10 October 1987, Varna, BGRKARPUZOV, D. S; TODOROV, S. S.Vacuum. 1988, Vol 38, Num 11, pp 965-1055, issn 0042-207XConference Proceedings

On the defect structure due to low energy ion bombardment of graphiteMARTON, D; BU, H; BOYD, K. J et al.Surface science. 1995, Vol 326, Num 3, pp L489-L493, issn 0039-6028Article

Collisional and chemically guided processes in low energy ion beam oxidationTODOROV, S. S; CHAKAROV, I. R; KARPUZOV, D. S et al.Vacuum. 1992, Vol 43, Num 5-7, pp 583-585, issn 0042-207XConference Paper

Boron nitride film formation by means of dynamic mixing methodFUJIMOTO, F.Vacuum. 1990, Vol 42, Num 1-2, pp 67-72, issn 0042-207X, 6 p.Conference Paper

Calculation of the depth profiles associated with high energy ion implantationBURENKOV, A. F; KOMAROV, F. F.Vacuum. 1990, Vol 42, Num 1-2, pp 13-15, issn 0042-207X, 3 p.Conference Paper

Effect of low-energy ion flows on the physico-mechanical properties and morphology of iron surfacesCHEKANOV, A. L; ROMANOV, I. G; PEREVEZENTSEV, V. N et al.Vacuum. 1990, Vol 42, Num 1-2, pp 85-87, issn 0042-207X, 3 p.Conference Paper

Investigation of arsenic-implanted silicon by optical reflectometrySTAVROV, V. I; VARBANOV, R; VASILIEV, O et al.Vacuum. 1990, Vol 42, Num 1-2, pp 107-109, issn 0042-207X, 3 p.Conference Paper

Range profile calculations by direct numerical solution of linearized Boltzmann transport equationsPOSSELT, M.Vacuum. 1990, Vol 42, Num 1-2, pp 9-12, issn 0042-207X, 4 p.Conference Paper