KRYOPUMPEN FUER TECHNISCHE VAKUUMPROZESSE. = POMPES CRYOGENIQUES POUR PROCESSUS TECHNIQUES SOUS VIDEWINKLER O.1977; VAKUUM-TECH.; DTSCH.; DA. 1977; VOL. 26; NO 3; PP. 67-72; ABS. ANGL. FR.; BIBL. 8 REF.Article

LE DEVELOPPEMENT DE LA METALLURGIE SOUS VIDE ET SES PERSPECTIVESWINKLER O.1976; VIDE; FR.; DA. 1976; VOL. 31; NO 181; PP. 1-14; BIBL. 17 REF.Article

CONTRIBUTION A LA DETECTION ET AU DOSAGE DE L'OXYDE DE METHYLFURFUROL DANS LE MIEL ET LE MIEL ARTIFICIELWINKLER O.1975; ; S.L.; DA. 1975; DE L'ALLEM.: ZEITSCHRIFT FUER LEBENSMITTELUNTERSUCHUNG UND- FORSCHUNG, 1955; 102, NO 3, 161-167Miscellaneous

SICHERUNG AUTOMATISCHER CHEMIEANLAGEN = SECURITE DANS UNE INSTALLATION CHIMIQUE AUTOMATISEE.WINKLER O; STROHRMANN G.1973; REGELGSTECH. PRAXIS PROZESS-RECHENTECH.; DTSCH.; DA. 1973; VOL. 15; NO 2; PP. 27-32Serial Issue

Der Einfluss der Vakuumbedingungen auf die Lebensdauer von Wolfram-HaarnadelkathodenWINKLER, O.Optik (Stuttgart). 1991, Vol 88, Num 4, pp 172-176, issn 0030-4026Article

NEUE VAKUUM-SCHMELZ- UND GIESSANLAGE ZUR HERSTELLUNG VON FEINGUSS FUER FAHRZEUGTURBINEN = NOUVELLE INSTALLATION DE FUSION ET DE COULEE SOUS VIDE POUR LE MOULAGE A LA CIRE PERDUE DES TURBINES DE VEHICULEVOLLMER H; WINKLER O.1975; GIESSEREI; DTSCH.; DA. 1975; VOL. 62; NO 7; PP. 155-158; ABS. ANGL. FRArticle

Tungsten hairpin cathodes with longer lifetimesWINKLER, O.Optik (Stuttgart). 1988, Vol 78, Num 3, pp 111-116, issn 0030-4026Article

CHEMICAL PROCESSES 1WINKLER O; SMALE RJ.1971; IN: DIGITAL COMPUT. APPL. PROCESS CONTROL. PROC. 3RD INT. CONF., HELSINKI, 1971; S.L.; INT. FED. AUTOM. CONTROL; DA. 1971; PP. (19 P.); BIBL. DISSEM.Conference Proceedings

RACIONALIZACIA OHRIEVACICH KAPACIT TEPLEJ VALCOVNE VSZ KOSICE = RATIONALIZATION OF REHEATING CAPACITIES IN THE ROLLING MILLS OF THE EASTERN SLOVAK IRONWORKSKIRALY S; BODIK R; WINKLER O et al.1982; HUTNIK; ISSN 0438-2757; CSK; DA. 1982-12; VOL. 32; NO 12; PP. 441-443Article

THE PERFORMANCE OF A CRYO PUMP WITH CLOSED CIRCUIT REFRIGERATION FOR COATING UNITS.WINKLER O; WOESSNER H; RUHE J et al.1974; VIDE; FR.; DA. 1974; NO 169 SUPPL.; PP. 190-196; BIBL. 11 REF.; (JOURN. TECHNOL. VIDE; VERSAILLES; 1974)Conference Paper

Manifestly gauge-invariant general relativistic perturbation theory: II. FRW background and first orderGIESEL, K; HOFMANN, S; THIEMANN, T et al.Classical and quantum gravity (Print). 2010, Vol 27, Num 5, issn 0264-9381, 055006.1-055006.52Article

Manifestly gauge-invariant general relativistic perturbation theory: I. FoundationsGIESEL, K; HOFMANN, S; THIEMANN, T et al.Classical and quantum gravity (Print). 2010, Vol 27, Num 5, issn 0264-9381, 055005.1-055005.80Article

Floating nano-dot MOS capacitor memory arrays without cell transistorsWINKLER, O; BAUS, M; SPANGENBERG, B et al.Microelectronic engineering. 2004, Vol 73-74, pp 719-724, issn 0167-9317, 6 p.Conference Paper

Ohrev ingotov v hlbinných peciach so zvýšeným objemom spalín = Heating of ingots in pit furnaces with increased combustion volume = Erhitzen von Rohbloecken in Tiefoefen mit erhoehtem VerbrennungsvolumenKIRALY, S; BODIK, R; WINKLER, O et al.Hutník (Praha). 1986, Vol 36, Num 7, pp 252-259, issn 0438-2757Article

High-density silicon nanowire growth from self-assembled Au nanoparticlesALBUSCHIES, J; BAUS, M; WINKLER, O et al.Microelectronic engineering. 2006, Vol 83, Num 4-9, pp 1530-1533, issn 0167-9317, 4 p.Conference Paper

Concept of floating-dot memory transistors on silicon-on-insulator substrateWINKLER, O; MERGET, F; HEUSER, M et al.Microelectronic engineering. 2002, Vol 61-62, pp 497-503, issn 0167-9317Conference Paper

Deposition and characterization of metastable Cu₃N layers for applications in optical data storageCREMER, R; WITTHAUT, M; NEUSCHÜTZ, D et al.Mikrochimica acta (1966. Print). 2000, Vol 133, Num 1-4, pp 299-302, issn 0026-3672Conference Paper

Light emission from Si/SiO₂ superlattices fabricated by RPECVDRÖLVER, R; WINKLER, O; FÖRST, M et al.Microelectronics and reliability. 2005, Vol 45, Num 5-6, pp 915-918, issn 0026-2714, 4 p.Conference Paper

Charge accumulation in the dielectric of the nanocluster NVM mos structures under anti- and unipolar W/E window formationTURCHANIKOV, V; NAZAROV, A; LYSENKO, V et al.Microelectronics and reliability. 2007, Vol 47, Num 4-5, pp 626-630, issn 0026-2714, 5 p.Conference Paper

Influence of channel width on n- and p-type nano-wire-MOSFETs on silicon on insulator substrateLEMME, M; MOLLENHAUER, T; KURZ, H et al.Microelectronic engineering. 2003, Vol 67-68, pp 810-817, issn 0167-9317, 8 p.Conference Paper

Fabrication of wire-MOSFETs on silicon-on-insulator substrateHEUSER, M; BAUS, M; HADAM, B et al.Microelectronic engineering. 2002, Vol 61-62, pp 613-618, issn 0167-9317Conference Paper