au.\*:("YEO, Y. C")
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A High-Yield HfOx-Based Unipolar Resistive RAM Employing Ni Electrode Compatible With Si-Diode Selector for Crossbar IntegrationTRAN, X. A; YU, H. Y; NGUYEN, B. Y et al.IEEE electron device letters. 2011, Vol 32, Num 3, pp 396-398, issn 0741-3106, 3 p.Article
Temperature independent current biasing employing TFETGUO, P. F; YANG, Y; SAMUDRA, G et al.Electronics letters. 2010, Vol 46, Num 11, pp 786-787, issn 0013-5194, 2 p.Article
A Self-Rectifying AlOy Bipolar RRAM With Sub-50-μA Set/Reset Current for Cross-Bar ArchitectureTRAN, X. A; ZHU, W; LIU, W. J et al.IEEE electron device letters. 2012, Vol 33, Num 10, pp 1402-1404, issn 0741-3106, 3 p.Article
Breaking the Speed Limits of Phase-Change MemoryLOKE, D; LEE, T. H; WANG, W. J et al.Science (Washington, D.C.). 2012, Vol 336, Num 6088, pp 1566-1569, issn 0036-8075, 4 p.Article
A rationale for membrane peeling in the repair of stage 4 macular holesANG, A; SNEAD, D. R. J; JAMES, S et al.Eye (London. 1987). 2006, Vol 20, Num 2, pp 208-214, issn 0950-222X, 7 p.Article
Negative U traps in HfO2 gate dielectrics and frequency dependence of dynamic BTI in MOSFETsSHEN, C; LI, M. F; WANG, X. P et al.International Electron Devices Meeting. 2004, pp 733-736, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper
Comparison of the optical gain of wurtzite GaN/AlGaN quantum well lasers grown on the (0001)- and (1010) oriented substratesCHONG, T. C; YEO, Y. C; LI, M. F et al.SPIE proceedings series. 1998, pp 51-60, isbn 0-8194-2873-6Conference Paper
A Self-Rectifying HfOx-Based Unipolar RRAM With NiSi ElectrodeTRAN, X. A; ZHU, W. G; YU, H. Y et al.IEEE electron device letters. 2012, Vol 33, Num 4, pp 585-587, issn 0741-3106, 3 p.Article
Electronic structures of wurtzite ZnO and ZnO/MgZnO quantum wellFAN, W. J; ABIYASA, A. P; TAN, S. T et al.Journal of crystal growth. 2006, Vol 287, Num 1, pp 28-33, issn 0022-0248, 6 p.Conference Paper
Time and temperature-dependent changes in the structural properties of tetrahedral amorphous carbon filmsTAY, B. K; SHEEJA, D; LAU, S. P et al.Surface & coatings technology. 2000, Vol 130, Num 2-3, pp 248-251, issn 0257-8972Article
Self-Selection Unipolar HfOx-Based RRAMTRAN, X. A; ZHU, W; LIU, W. J et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 1, pp 391-395, issn 0018-9383, 5 p.Article
Compact HSPICE model for IMOS deviceLIN, J; TOH, E. H; SHEN, C et al.Electronics Letters. 2008, Vol 44, Num 2, pp 91-92, issn 0013-5194, 2 p.Article
Effect of the (1010) crystal orientation on the optical gain of wurtzite GaN-AlGaN quantum-well lasersYEO, Y. C; CHONG, T. C; LI, M. F et al.IEEE journal of quantum electronics. 1998, Vol 34, Num 7, pp 1270-1279, issn 0018-9197Article
Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT 2005) Symposium H: Silicon microelectronics: processing to packaging, Singapore, July 3-8, 2005MHAISALKAR, S. G; YEO, Y.-C; BALASUBRAMANIAN, N et al.Thin solid films. 2006, Vol 504, Num 1-2, issn 0040-6090, 465 p.Conference Proceedings
Junctionless Π-gate transistor with indium gallium arsenide channelGUO, H. X; ZHANG, X; ZHU, Z et al.Electronics letters. 2013, Vol 49, Num 6, pp 402-404, issn 0013-5194, 3 p.Article
Work function tuning of metal nitride electrodes for advanced CMOS devicesREN, C; FAIZHAL, B. B; CHAN, D. S. H et al.Thin solid films. 2006, Vol 504, Num 1-2, pp 174-177, issn 0040-6090, 4 p.Conference Paper
On the mobility, turn-on characteristics and activation energy of polycrystalline silicon thin-film transistorsGUPTA, Navneet; TYAGI, B. P.Thin solid films. 2006, Vol 504, Num 1-2, pp 59-63, issn 0040-6090, 5 p.Conference Paper
A study of Si/SiGe selective epitaxial growth by experimental design approachTAN, B. L; TAN, T. L.Thin solid films. 2006, Vol 504, Num 1-2, pp 95-100, issn 0040-6090, 6 p.Conference Paper
Parameter extraction using novel phenomena in nano-MOSFETs with ultra-thin (EOT=0.46-1.93 nm) high-K gate dielectricsKAR, Samares.Thin solid films. 2006, Vol 504, Num 1-2, pp 178-182, issn 0040-6090, 5 p.Conference Paper
Nano-indentation characterization of Ni-Cu-Sn IMC layer subject to isothermal agingLUHUA XU; PANG, John H. L.Thin solid films. 2006, Vol 504, Num 1-2, pp 362-366, issn 0040-6090, 5 p.Conference Paper
A novel electrostatic microactuator for large deflections in MEMS applicationsSINGH, Janak; AGARWAL, Ajay; SOUNDARAPANDIAN, Mohanraj et al.Thin solid films. 2006, Vol 504, Num 1-2, pp 64-68, issn 0040-6090, 5 p.Conference Paper
Effects of hollow cathode and Ar/H2 ratio on plasma cleaning of Cu leadframeHSIEH, J. H; LI, C.Thin solid films. 2006, Vol 504, Num 1-2, pp 101-103, issn 0040-6090, 3 p.Conference Paper
Effect of oxidation temperature on the quality and reliability of ultrathin gate oxideMARATHE, Vaibhav G; CHANDANI, Naresh; DASGUPTA, Nandita et al.Thin solid films. 2006, Vol 504, Num 1-2, pp 126-128, issn 0040-6090, 3 p.Conference Paper
Electrical properties of low temperature deposited amorphous barium titanate thin films as dielectrics for integrated capacitorsEL KAMEL, F; GONON, P; JOMNI, F et al.Thin solid films. 2006, Vol 504, Num 1-2, pp 201-204, issn 0040-6090, 4 p.Conference Paper
Characterization of copper chemical mechanical polishing (CMP) in nitric acid-hydrazine based slurry for microelectronic fabricationSURYA SEKHAR, M; RAMANATHAN, S.Thin solid films. 2006, Vol 504, Num 1-2, pp 227-230, issn 0040-6090, 4 p.Conference Paper
