A TEMPERATURE MODEL FOR THE GAAS MESFETCURTICE WR; YONG HOON YUN.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 8; PP. 954-962; BIBL. 23 REF.Article

Characteristics of the low-temperature-deposited SiO₂-Ga_0.47In_0.53As metal/insulator/semiconductor interfaceGARDNER, P. D; NARAYAN, S. Y; YONG-HOON YUN et al.Thin solid films. 1984, Vol 117, Num 3, pp 173-190, issn 0040-6090Article

GA_0.47IN_O.53 AS METAL INSULATOR FIELD-EFFECT TRANSISTORS (MISFETS) FOR MICROWAVE FREQUENCY APPLICATIONSGARDNER PD; NAYAYAN SY; COLVIN S et al.1981; RCA REV.; ISSN 0033-6831; USA; DA. 1981; VOL. 42; NO 4; PP. 542-556; BIBL. 10 REF.Article

GAAS POWER FIELD-EFFECT TRANSISTORS FOR K-BAND OPERATIONTAYLOR GC; YONG HOON YUN; LIU SG et al.1981; RCA REV.; ISSN 0033-6831; USA; DA. 1981; VOL. 42; NO 4; PP. 508-521; BIBL. 8 REF.Article

Low-temperature migration enhanced epitaxy of based material for AlGaAs/GaAs heterojunction bipolar transistorsKAI ZHANG; DER-WOEI WU; JIANMING FU et al.Applied physics letters. 1993, Vol 63, Num 6, pp 809-811, issn 0003-6951Article