Influence of freelayer in magnetic tunnel junction on switching of submicrometer magnetoresistive random access memory arraysYUN KI LEE; BYONG SUN CHUN; YOUNG KEUN KIM et al.IEEE transactions on magnetics. 2005, Vol 41, Num 2, pp 883-886, issn 0018-9464, 4 p.Conference Paper

Switching characteristics of magnetic tunnel junctions with a synthetic antiferromagnetic free layerYUN KI LEE; BYONG SUN CHUN; YOUNG KEUN KIM et al.IEEE transactions on magnetics. 2005, Vol 41, Num 10, pp 2688-2690, issn 0018-9464, 3 p.Conference Paper