Active nitrogen species dependence on radiofrequency plasma source operating parameters and their role in GaN growthILIOPOULOS, E; ADIKIMENAKIS, A; DIMAKIS, E et al.Journal of crystal growth. 2005, Vol 278, Num 1-4, pp 426-430, issn 0022-0248, 5 p.Conference Paper

Thermal diffusion studies of MBE-grown znSe/Fe/ZnSe and ZnS/Fe/ZnS structuresSOU, I. K; WANG, C; CHAN, S. K et al.Journal of crystal growth. 2005, Vol 278, Num 1-4, pp 282-287, issn 0022-0248, 6 p.Conference Paper

(Ga, Gd, As) film growth on GaAs substrate by low-energy ion-beam depositSONG, Shu-Lin; CHEN, Nuo-Fu; ZHOU, Jian-Ping et al.Journal of crystal growth. 2004, Vol 260, Num 3-4, pp 451-455, issn 0022-0248, 5 p.Article

Epitaxial growth and domain coalescence of sexithiophene induced by the steps on cleaved KBr(001)IKEDA, Susumu; KIGUCHI, Manabu; YOSHIDA, Yuji et al.Journal of crystal growth. 2004, Vol 265, Num 1-2, pp 296-301, issn 0022-0248, 6 p.Article

Epitaxial growth of Ag₂S films on MgO(001)NOZAKI, Hiroshi; ONODA, Mitsuko; YUKINO, Ken et al.Journal of solid state chemistry (Print). 2004, Vol 177, Num 4-5, pp 1165-1172, issn 0022-4596, 8 p.Article

Epitaxial growth of europium on (1 1 0)Nb and (0 0 0 1)YSORIANO, S; DUMESNIL, K; DUFOUR, C et al.Journal of crystal growth. 2004, Vol 265, Num 3-4, pp 582-591, issn 0022-0248, 10 p.Article

In situ optical investigation of oligothiophene layers grown by organic molecular beam epitaxy : Linear optics at surfaces and interfacesGOLETTI, C; BUSSETTI, G; CHIARADIA, P et al.Journal of physics. Condensed matter (Print). 2004, Vol 16, Num 39, pp S4393-S4402, issn 0953-8984Article

Pd growth on Cu(111): stress relaxation through surface alloying?PANIAGO, R; DE SIERVO, A; SOARES, E. A et al.Surface science. 2004, Vol 560, Num 1-3, pp 27-34, issn 0039-6028, 8 p.Article

Molecular beam epitaxy of compound materials through shadow masksSCHALLENBERG, T; MOLENKAMP, L. W; KARCZEWSKI, G et al.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 15, pp 155328.1-155320.11, issn 1098-0121Article

Cdse-based quantum dot nanostructures: MBE growth, properties and applicationsIVANOV, S. V.Journal of alloys and compounds. 2004, Vol 371, pp 15-19, issn 0925-8388, 5 p.Conference Paper

Determination of nitrogen composition in GaN_xAs_1-xepilayer on GaAsFAN, W. J; YOON, S. F; CHEAH, W. K et al.Journal of crystal growth. 2004, Vol 268, Num 3-4, pp 470-474, issn 0022-0248, 5 p.Conference Paper

Layer-by-layer growth of GaAs(0 0 1) studied by in situ synchrotron X-ray diffractionBRAUN, Wolfgang; JENICHEN, Bernd; KAGANER, Vladimir M et al.Surface science. 2003, Vol 525, Num 1-3, pp 126-136, issn 0039-6028, 11 p.Article

Fabrication of Ge nanoclusters on Si with a buffer layer-assisted growth methodYOO, K; LI, A.-P; ZHENYU ZHANG et al.Surface science. 2003, Vol 546, Num 2-3, pp L803-L807, issn 0039-6028Article

Arsenic incorporation in GaN during growth by molecular beam epitaxyFOXON, C. T; NOVIKOV, S. V; LI, T et al.Journal of crystal growth. 2003, Vol 251, Num 1-4, pp 510-514, issn 0022-0248, 5 p.Conference Paper

The effects of carbon incorporation during GSMBE of Si_1-yC_y and Si_1-x-yGe_xC_y: growth dynamics and segregationPRICE, R. W; TOK, E. S; WOODS, N. J et al.Surface science. 2003, Vol 532-35, pp 905-910, issn 0039-6028, 6 p.Conference Paper

Growth and characterization of compositionally graded InGaP layers on GaAs substrate by solid-source molecular beam epitaxyYUAN, K; RADHAKRISHNAN, K.Journal of crystal growth. 2002, Vol 243, Num 2, pp 288-294, issn 0022-0248Article

Growth dynamics of the epitaxial SrO film on SrTiO₃(001)TAKAHASHI, R; MATSUMOTO, Y; OHSAWA, T et al.Journal of crystal growth. 2002, Vol 234, Num 2-3, pp 505-508, issn 0022-0248Article

Growth of crystalline praseodymium oxide on siliconOSTEN, H. J; LIU, J. P; BUGIEL, E et al.Journal of crystal growth. 2002, Vol 235, Num 1-4, pp 229-234, issn 0022-0248Article

Homoepitaxy of 6H-SiC by solid-source molecular beam epitaxy using C₆₀ and Si effusion cellsLAMPERT, W. V; EITING, C. J; SMITH, S. A et al.Journal of crystal growth. 2002, Vol 234, Num 2-3, pp 369-372, issn 0022-0248Article

Novel synthetic pathways to wide bandgap semiconductors in the Si-C-Al-N systemTULLE, John; ROUCKA, Radek; CHIZRNESHYA, Andrew V. G et al.Solid state sciences. 2002, Vol 4, Num 11-12, pp 1509-1519, issn 1293-2558, 11 p.Article

Limited In incorporation during pseudomorphic InAs/GaAs growth and quantum dot formation observed by in situ stress measurementsSILVEIRA, J. P; GARCIA, J. M; BRIONES, F et al.Applied surface science. 2002, Vol 188, Num 1-2, pp 75-79, issn 0169-4332Conference Paper

Heteroepitaxy-new challenges and opportunities for materials engineering through molecular beam epitaxyPLOOG, Klaus H.Journal of crystal growth. 2002, Vol 237-39, pp 2028-2034, issn 0022-0248, 3Conference Paper

Investigation of initial growth process for GaN heteroepitaxial layers grown on Si(0 0 1) and Si(1 1 1) substrates by ECR-assisted MBEYODO, T; ANDO, H; NOSEI, D et al.Journal of crystal growth. 2002, Vol 237-39, pp 1104-1109, issn 0022-0248, 2Conference Paper

Molecular beam epitaxy of wurtzite (Ga, Mn)N films on sapphire(0 0 0 1) showing the ferromagnetic behaviour at room temperatureSONODA, Saki; SHIMIZU, Saburo; SASAKI, Takahiko et al.Journal of crystal growth. 2002, Vol 237-39, pp 1358-1362, issn 0022-0248, 2Conference Paper

Molecular beam epitaxy of GaNAs and GaInNAsKONDOW, Masahiko; KITATANI, Takeshi.Semiconductor science and technology. 2002, Vol 17, Num 8, pp 746-754, issn 0268-1242Article