0.5 THz Performance of a Type-II DHBT With a Doping-Graded and Constant-Composition GaAsSb BaseHUIMING XU; WU, Barry; IVERSON, Eric W et al.IEEE electron device letters. 2014, Vol 35, Num 1, pp 24-26, issn 0741-3106, 3 p.Article

600 V Diamond Junction Field-Effect Transistors Operated at 200 °CIWASAKI, Takayuki; YAITA, Junya; KATO, Hiromitsu et al.IEEE electron device letters. 2014, Vol 35, Num 2, pp 241-243, issn 0741-3106, 3 p.Article

A Comparison of Two Excitation Modes for MEMS Electrothermal Displacement SensorsMOHAMMADI, Ali; REZA MOHEIMANI, S. O; RASIT YUCE, Mehmet et al.IEEE electron device letters. 2014, Vol 35, Num 5, pp 584-586, issn 0741-3106, 3 p.Article

A Memristor SPICE Model Accounting for Volatile Characteristics of Practical ReRAMBERDAN, Radu; CHUAN LIM; KHIAT, Ali et al.IEEE electron device letters. 2014, Vol 35, Num 1, pp 135-137, issn 0741-3106, 3 p.Article

A SPICE Model of Resistive Random Access Memory for Large-Scale Memory Array SimulationHAITONG LI; PENG HUANG; BIN GAO et al.IEEE electron device letters. 2014, Vol 35, Num 2, pp 211-213, issn 0741-3106, 3 p.Article

A Simple Low Cost Monolithic Transformer for High-Voltage Gate Driver ApplicationsLULU PENG; RONGXIANG WU; XIANGMING FANG et al.IEEE electron device letters. 2014, Vol 35, Num 1, pp 108-110, issn 0741-3106, 3 p.Article

A Simple Method to Grow Thermal SiO₂ Interlayer for High-Performance SPC Poly-Si TFTs Using Al₂O₃ Gate DielectricMENG ZHANG; WEI ZHOU; RONGSHENG CHEN et al.IEEE electron device letters. 2014, Vol 35, Num 5, pp 548-550, issn 0741-3106, 3 p.Article

Analysis of Correlated Gate and Drain Random Telegraph Noise in Post-Soft Breakdown TiN/HfLaO/SiO_x nMOSFETsWENHU LIU; PADOVANI, Andrea; LARCHER, Luca et al.IEEE electron device letters. 2014, Vol 35, Num 2, pp 157-159, issn 0741-3106, 3 p.Article

Asymmetric InGaAs/InP MOSFETs: With Source/Drain EngineeringJIONGJIONG MO; LIND, Erik; WERNERSSON, Lars-Erik et al.IEEE electron device letters. 2014, Vol 35, Num 5, pp 515-517, issn 0741-3106, 3 p.Article

Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access MemoryRUI ZHANG; CHANG, Kuan-Chang; CHEN, Min-Chen et al.IEEE electron device letters. 2014, Vol 35, Num 6, pp 630-632, issn 0741-3106, 3 p.Article

Comparison of Random Dopant and Gate-Metal Workfunction Variability Between Junctionless and Conventional FinFETsSK MASUM NAWAZ; DUTTA, Souvik; CHATTOPADHYAY, Avik et al.IEEE electron device letters. 2014, Vol 35, Num 6, pp 663-665, issn 0741-3106, 3 p.Article

Development and Electrical Properties of (Ca_0.7Sr_0.3) (Zr_0.8Ti_0.2)O₃ Thin Film Applied to Embedded Decoupling CapacitorsLEE, Seung-Hwan; KIM, Hong-Ki; KANG, Min-Gyu et al.IEEE electron device letters. 2014, Vol 35, Num 7, pp 777-779, issn 0741-3106, 3 p.Article

Dopant-Segregation Technique for Leakage Reduction and Performance Improvement in Trigate Transistors Without Raised Source/Drain EpitaxyFEI LIU; ZHEN ZHANG; KHATER, Marwan H et al.IEEE electron device letters. 2014, Vol 35, Num 5, pp 512-514, issn 0741-3106, 3 p.Article

Enhanced Light Extraction Using Blue LED Package Consisting of TiO₂-Doped Silicone Layer and Silicone LensSU, Yan-Kuin; WANG, Pin-Chao; LIN, Chun-Liang et al.IEEE electron device letters. 2014, Vol 35, Num 5, pp 575-577, issn 0741-3106, 3 p.Article

Enhancing the Performance of Germanium Channel nMOSFET Using Phosphorus Dopant SegregationCHEN, Che-Wei; TZENG, Ju-Yuan; CHUNG, Cheng-Ting et al.IEEE electron device letters. 2014, Vol 35, Num 1, pp 6-8, issn 0741-3106, 3 p.Article

Experimental Study on NBTI Degradation Behaviors in Si pMOSFETs Under Compressive and Tensile StrainsWANGRAN WU; CHANG LIU; JIABAO SUN et al.IEEE electron device letters. 2014, Vol 35, Num 7, pp 714-716, issn 0741-3106, 3 p.Article

Fabrication of Humidity Sensor Based on Bilayer GrapheneCHEN, Meng-Chu; HSU, Cheng-Liang; HSUEH, Ting-Jen et al.IEEE electron device letters. 2014, Vol 35, Num 5, pp 590-592, issn 0741-3106, 3 p.Article

Filament Formation in an Electrochemical SiO₂-Based Memory Device During the Forming ProcessLIU, Chih-Yi; LIN, Chao-Han.IEEE electron device letters. 2014, Vol 35, Num 8, pp 829-831, issn 0741-3106, 3 p.Article

GaN-on-Si Vertical Schottky and p-n DiodesYUHAO ZHANG; MIN SUN; PIEDRA, Daniel et al.IEEE electron device letters. 2014, Vol 35, Num 6, pp 618-620, issn 0741-3106, 3 p.Article

Gate-Bias Stress Stability of P-Type SnO Thin-Film Transistors Fabricated by RF-SputteringCHIU, I-Chung; CHENG, I-Chun.IEEE electron device letters. 2014, Vol 35, Num 1, pp 90-92, issn 0741-3106, 3 p.Article

High-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si SubstratesJOHANSSON, Sofia; MEMISEVIC, Elvedin; WEMERSSON, Lars-Erik et al.IEEE electron device letters. 2014, Vol 35, Num 5, pp 518-520, issn 0741-3106, 3 p.Article

High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiN_x/RF-Sputtered-HfO₂WOOJIN CHOI; OGYUN SEOK; HOJIN RYU et al.IEEE electron device letters. 2014, Vol 35, Num 2, pp 175-177, issn 0741-3106, 3 p.Article

Intentionally Carbon-Doped AlGaN/GaN HEMTs: Necessity for Vertical Leakage PathsUREN, Michael J; SILVESTRI, Marco; CÄSAR, Markus et al.IEEE electron device letters. 2014, Vol 35, Num 3, pp 327-329, issn 0741-3106, 3 p.Article

Large On-Current Enhancement in Hetero-Junction Tunnel-FETs via Molar Fraction GradingBROCARD, Sylvan; PALA, Marco G; ESSENI, David et al.IEEE electron device letters. 2014, Vol 35, Num 2, pp 184-186, issn 0741-3106, 3 p.Article

Modeling 20-nm Germanium FinFET With the Industry Standard FinFET ModelKHANDELWAL, Sourabh; DUARTE, Juan Pablo; YOGESH SINGH CHAUHAN et al.IEEE electron device letters. 2014, Vol 35, Num 7, pp 711-713, issn 0741-3106, 3 p.Article