A Novel Micromachined AlGaN/GaN Power HEMT With Air-Bridged Matrix Heat Redistribution Layer DesignCHIU, Hsien-Chin; WANG, Hsiang-Chun; YANG, Chih-Wei et al.IEEE electron device letters. 2014, Vol 35, Num 2, pp 163-165, issn 0741-3106, 3 p.Article

A Novel RRAM Stack With TaO_x/HfO_y Double-Switching-Layer Configuration Showing Low Operation Current Through Complimentary Switching of Back-to-Back Connected SubcellsYAN ZHE TANG; ZHENG FANG; XIN PENG WANG et al.IEEE electron device letters. 2014, Vol 35, Num 6, pp 627-629, issn 0741-3106, 3 p.Article

ALD TiN Barrier Metal for pMOS Devices With a Chemical Oxide Interfacial Layer for 20-nm Technology NodeCHEN, Ying-Tsung; LIN, Chien-Ting; CHIANG, Wen-Tai et al.IEEE electron device letters. 2014, Vol 35, Num 3, pp 306-308, issn 0741-3106, 3 p.Article

Al₂O₃/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial LayerSHENGHOU LIU; SHU YANG; ZHIKAI TANG et al.IEEE electron device letters. 2014, Vol 35, Num 7, pp 723-725, issn 0741-3106, 3 p.Article

Band-to-Band Tunneling in Ge-Rich SiGe DevicesOBRADOVIC, Boma; BOWEN, Robert C; RODDER, Mark S et al.IEEE electron device letters. 2014, Vol 35, Num 4, pp 473-475, issn 0741-3106, 3 p.Article

Characterization and Capacitive Modeling of Target Concentration-Dependent Subthreshold Swing in Silicon Nanoribbon BiosensorsWON HEE LEE; LEE, Jin-Moo; MIHEE UHM et al.IEEE electron device letters. 2014, Vol 35, Num 5, pp 587-589, issn 0741-3106, 3 p.Article

Dependence of the Noise Behavior on the Drain Current for Thin Film TransistorsTAI, Ya-Hsiang; CHANG, Chun-Yi; HSIEH, Chung-Lun et al.IEEE electron device letters. 2014, Vol 35, Num 2, pp 229-231, issn 0741-3106, 3 p.Article

Dual Floating Gate Unified Memory MOSFET With Simultaneous Dynamic and Non-Volatile OperationSARKAR, Biplab; RAMANAN, Narayanan; JAYANTI, Srikant et al.IEEE electron device letters. 2014, Vol 35, Num 1, pp 48-50, issn 0741-3106, 3 p.Article

Effect of Self-Heating on the Drain Current Transient Response in AlGaN/GaN HEMTsYAMIN ZHANG; SHIWEI FENG; HUI ZHU et al.IEEE electron device letters. 2014, Vol 35, Num 3, pp 345-347, issn 0741-3106, 3 p.Article

Elementary Aspects for Circuit Implementation of Reconfigurable Nanowire TransistorsTROMMER, Jens; HEINZIG, André; SLESAZECK, Stefan et al.IEEE electron device letters. 2014, Vol 35, Num 1, pp 141-143, issn 0741-3106, 3 p.Article

Energy Distribution of Positive Charges in Al₂O₃/GeO₂/Ge pMOSFETsJIGANG MA; ZHANG, Jian F; CHALKER, Paul et al.IEEE electron device letters. 2014, Vol 35, Num 2, pp 160-162, issn 0741-3106, 3 p.Article

Field Emission Properties of Triode-Type Graphene Mesh Emitter ArraysCHI LI; XIAOXIA YANG; SHUYI DING et al.IEEE electron device letters. 2014, Vol 35, Num 7, pp 786-788, issn 0741-3106, 3 p.Article

Ga₂O₃:ITO Transparent Conducting Electrodes for Near-Ultraviolet Light-Emitting DiodesSU JIN KIM; SANG YOUNG PARK; KYEONG HEON KIM et al.IEEE electron device letters. 2014, Vol 35, Num 2, pp 232-234, issn 0741-3106, 3 p.Article

GaN Heterostructure Barrier Diodes Exploiting Polarization-Induced δ-DopingPEI ZHAO; VERMA, Amit; VERMA, Jai et al.IEEE electron device letters. 2014, Vol 35, Num 6, pp 615-617, issn 0741-3106, 3 p.Article

Gold Plated Carbon Nanotube Bundle Antenna for Millimeter-Wave ApplicationsLIN, Kuan-Ting; CHEN, Yu-Jen; HSIEH, Jian-Yu et al.IEEE electron device letters. 2014, Vol 35, Num 3, pp 378-380, issn 0741-3106, 3 p.Article

High Temperature Characteristics of GaN-Based Inverter Integrated With Enhancement-Mode (E-Mode) MOSFET and Depletion-Mode (D-Mode) HEMTZHE XU; JINYAN WANG; XIAOHUA MA et al.IEEE electron device letters. 2014, Vol 35, Num 1, pp 33-35, issn 0741-3106, 3 p.Article

High-Q and Capacitance Ratio Multilayer Metal-on-Piezoelectric RF MEMS VaractorsPULSKAMP, Jeffrey S; BEDAIR, Sarah S; POLCAWICH, Ronald G et al.IEEE electron device letters. 2014, Vol 35, Num 8, pp 871-873, issn 0741-3106, 3 p.Article

High-Speed Dual-Gate a-IGZO TFT-Based Circuits With Top-Gate Offset StructureXIULING LI; DI GENG; MATIVENGA, Mallory et al.IEEE electron device letters. 2014, Vol 35, Num 4, pp 461-463, issn 0741-3106, 3 p.Article

High-Speed Light-Emitting Diodes Emitting at 500 nm With 463-MHz Modulation BandwidthLIAO, Chien-Lan; HO, Chong-Lung; CHANG, Yung-Fu et al.IEEE electron device letters. 2014, Vol 35, Num 5, pp 563-565, issn 0741-3106, 3 p.Article

Highly Transparent, High-Performance IGZO-TFTs Using the Selective Formation of IGZO Source and Drain ElectrodesWU, Hung-Chi; CHIEN, Chao-Hsin.IEEE electron device letters. 2014, Vol 35, Num 6, pp 645-647, issn 0741-3106, 3 p.Article

III-V Junctionless Gate-All-Around Nanowire MOSFETs for High Linearity Low Power ApplicationsYI SONG; CHEN ZHANG; DOWDY, Ryan et al.IEEE electron device letters. 2014, Vol 35, Num 3, pp 324-326, issn 0741-3106, 3 p.Article

Impact of Donor Traps on the 2DEG and Electrical Behavior of AlGaN/GaN MISFETsLONGOBARDI, Giorgia; UDREA, Florin; SQUE, Stephen et al.IEEE electron device letters. 2014, Vol 35, Num 1, pp 27-29, issn 0741-3106, 3 p.Article

Improved Performance of 365-nm LEDs by Inserting an Un-Doped Electron-Blocking LayerLIN, Wen-Yu; WANG, Tzu-Yu; OU, Sin-Liang et al.IEEE electron device letters. 2014, Vol 35, Num 4, pp 467-469, issn 0741-3106, 3 p.Article

Improvement of Light Trapping in a-Si:H-Based Solar Cells by Inserting a ZnO/LiF Double InterlayerYANG, Ji-Hwan; SEUNG YEOP MYONG; KOENG SU LIM et al.IEEE electron device letters. 2014, Vol 35, Num 1, pp 102-104, issn 0741-3106, 3 p.Article

Improvement of RF Performance by Using Tunnel Diode Body Contact Structure in PD SOI nMOSFETsKAI LU; JING CHEN; JIEXIN LUO et al.IEEE electron device letters. 2014, Vol 35, Num 1, pp 15-17, issn 0741-3106, 3 p.Article