ANNEALING DEPENDENT FAR FIELD OF GAAS-(GA, AL) AS LEDSZEHE A; JACOBS K.1973; CZECHOSL. J. PHYS.; CZECHOSL.; DA. 1973; VOL. 23; NO 5; PP. 567-575; BIBL. 14 REF.Serial Issue

DIFFUSE STRAHLUNG AUS (GAAL) AS/GAAS-HETERODIODEN VOM FABRY-PEROT-TYP = EMISSION DIFFUSE PAR DES HETERODIODES (GAAL) AS/GAAS DU TYPE FABRY-PEROTZEHE A; JACOBS B; ALBRECHT R et al.1972; KRISTALL U. TECH.; DTSCH.; DA. 1972; VOL. 7; NO 12; PP. 1365-1374; ABS. ANGL.; BIBL. 10 REF.Serial Issue

FIELD EFFECT OF GAAS PHOTOLUMINESCENCE IN THE GAP-GAAS AND GA_0.3AL_0.7 AS-GAAS HETEROJUNCTIONSHORIKOSHI Y; FURUKAWA Y.1972; JAP. J. APPL. PHYS.; JAP.; DA. 1972; VOL. 11; NO 9; PP. 1325-1332; BIBL. 12 REF.Serial Issue

REVERSE CURRENT CHARACTERISTICS OF SOME IMPERFECT SCHOTTKY BARRIERSLADBROOKE PH.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 6; PP. 743-749; BIBL. 21 REF.Serial Issue

HETEROJUNCTION TRANSISTORS WITH ENHANCED GAIN.ROSS PW; HICKS HGB; FROOM J et al.1977; ELECTRON. ENGNG; G.B.; DA. 1977; VOL. 49; NO 589; PP. 35-38; BIBL. 12 REF.Article

CONTACT NON REDRESSEUR SUR L'ARSENIURE DE GALLIUMKOMASHKO VA; MASLOVSKIJ FN; TUZ VF et al.1973; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1973; NO 11; PP. 61-63; BIBL. 9 REF.Serial Issue

GLASS-SEALED GAAS-ALGAAS TRANSMISSION PHOTOCATHODE.ANTYPAS GA; EDGECUMBE J.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 7; PP. 371-372; BIBL. 8 REF.Article

QUELQUES PROPRIETES ELECTRONIQUES DE GAAS P FORTEMENT DOPEABDURAKHMANOV KP; KOTOV BA; OKUNEVA NM et al.1972; FIZ. TVERD. TELA; S.S.S.R.; DA. 1972; VOL. 14; NO 9; PP. 2581-2584; BIBL. 14 REF.Serial Issue

VALLEY TRANSFER OF HOT ELECTRONS IN GAAS AND RELATED MIXED CRYSTALS.SHIRAFUJI J; INOUE M; ASHIDA K et al.1975; PROGR. THEOR. PHYS., SUPPL.; JAP.; DA. 1975; NO 57; PP. 204-216; BIBL. 21 REF.Article

EXPERIMENTAL PROPERTIES OF INJECTION LASERS: MODAL DISTRIBUTION OF LASER POWERSOMMERS HS JR.1973; J. APPL. PHYS.; U.S.A.; DA. 1973; VOL. 44; NO 3; PP. 1263-1275; BIBL. 30 REF.Serial Issue

RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS.CHANG LL; ESAKI L; TSU R et al.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 24; NO 2; PP. 593-595; BIBL. 12 REF.Article

ELECTRIC-FIELD-INDUCED INTERFERENCE EFFECTS AT THE GROUND EXCITATION LEVEL IN GAASEVANGELISTI F; FROVA A; FISCHBACH JU et al.1972; PHYS. REV. LETTERS; U.S.A.; DA. 1972; VOL. 29; NO 15; PP. 1001-1004; BIBL. 13 REF.Serial Issue

ELECTRICAL CONTACTS TO ION CLEANED N-TYPE GALLIUM ARSENIDEWALKER GH; CONWAY EJ.1972; I.E.E.E. TRANS. PARTS HYBR. PACKAG.; U.S.A.; DA. 1972; VOL. 8; NO 4; PP. 49-50; BIBL. 6 REF.Serial Issue

ELECTRONIC TRANSPORT IN AMORPHOUS GAAS AND GA-MG-AS THIN FILMS.SAKS NS; BARBE DF; ANDERSON GW et al.1974; I.E.E.E. TRANS. PARTS HYBR. PACKAG.; U.S.A.; DA. 1974; VOL. 10; NO 4; PP. 244-251; BIBL. 27 REF.Article

PHOTOEMISSION CHARACTERISTICS OF TRANSMISSION-MODE NEGATIVE ELECTRON AFFINITY GAAS AND (IN, GA) AS VAPOR-GROWN STRUTURES.FISHER DG; ENSTROM RE; ESCHER JS et al.1974; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1974; VOL. 21; NO 10; PP. 641-649; BIBL. 22 REF.Article

METHODES DE MODELISATION, CONCEPTION ET REALISATION DE STRUCTURES ELECTROLUMINESCENTES A SIMPLE ET DOUBLE HETEROJONCTIONS AU GAALASMARTINOT H; BAILHE A; MOTAWIE I et al.1979; ; FRA; DA. 1979; DGRST-77 7 1003; 2 FASC., 53+235 P.: ILL.; 30 CM; BIBL. 71 REF.; ACTION CONCERTEE: COMPOSANTS ET CIRCUITS MICROMINIATURISESReport

METHODE DE DETERMINATION DES PARAMETRES DES CENTRES D'IMPURETE DANS UN SEMICONDUCTEUR D'APRES LA RELAXATION DU COURANT INVERSE D'UNE STRUCTURE A BARRIERE SUPERFICIELLE (GAAS)TSARENKOV BV; GOL'DBERG YU A; POSSE EA et al.1972; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1972; VOL. 6; NO 12; PP. 2392-2396; BIBL. 9 REF.Serial Issue

INFLUENCE DE LA PRESSION HYDROSTATIQUE SUR LES CARACTERISTIQUES DES HETEROJONCTIONS GAAS-GE_1-X(GAAS)_XVILISOV AA; VORONKOV VP; DIAMANT VM et al.1979; IZVEST. VYSSH. UCHEBN. ZAVED., FIZ.; SUN; DA. 1979; NO 2; PP. 90-93; BIBL. 5 REF.Article

OPTICAL DETECTION OF CONDUCTION-ELECTRON SPIN RESONANCE IN GAAS, GA_1-XIN_XAS, AND GA_1-XAL_XAS.WEISBUCH C; HERMANN C.1977; PHYS. REV., B; U.S.A.; DA. 1977; VOL. 15; NO 2; PP. 816-822; BIBL. 36 REF.Article

LOSS MEASUREMENTS IN GAAS AND AL_XGA_1-X AS DIELECTRIC WAVEGUIDES BETWEEN 1.1 EV AND THE ENERGY GAP.MERZ JL; LOGAN RA; SERGENT AM et al.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 4; PP. 1436-1450; BIBL. 51 REF.Article

MESURE DU TAUX DE COMPENSATION ET DES FLUCTUATIONS DES IMPURETES DOPANTES DANS GAAS ET GAINAS DE TYPE NROBERT JL; RAYMOND A; AULOMBARD RL et al.1976; ; FRA; DA. 1976; DGRST 76 7 1431; 8 FASC., (27)+249 P., TIRES A PART: ILL.; 30 CM; BIBL. 147 REF.; ACTION CONCERT.: PHYS. ELECTRON.Report

CAPLESS ANNEALING OF ION-IMPLANTED GALLIUM ARSENIDE BY A MELT-CONTROLLED AMBIENT TECHNIQUEANDERSON CL; VAIDYAVATHAN KV; DUNLAP HL et al.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 4; PP. 925-927; BIBL. 18 REF.Article

INFLUENCE DE LA STOECHIOMETRIE SUR LES PROCESSUS DE RECOMBINAISON DANS LES CRISTAUX DE GAAS <SI>KAMALOV MN; KOLESNIK LI; MIL'VIDSKIJ MG et al.1980; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1980; VOL. 14; NO 1; PP. 159-163; BIBL. 12 REF.Article

QUELQUES PARTICULARITES DE L'EFFET D'UN TRAITEMENT THERMIQUE SUR LA PHOTOLUMINESCENCE DU GAASVOVNENKO VI; PROKHOROVICH AV.1977; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1977; NO 26; PP. 34-39; BIBL. 13 REF.Article

EMISSION FROM THE (1,1,0) FACE OF NEGATIVE-ELECTRON AFFINITY GALLIUM ARSENIDE.BURT MG; INKSON JC.1976; J. PHYS. D; G.B.; DA. 1976; VOL. 9; NO 1; PP. L5-L7; BIBL. 4 REF.Article