A +10dBm IIP3 SiGe mixer with IM3 cancellation techniqueOTAKA, Shoji; ASHIDA, Mitsuyuki; ISHII, Masato et al.IEEE International Solid-State Circuits Conference. 2004, pp 398-399, isbn 0-7803-8267-6, 2Vol, 2 p.Conference Paper

Fabrication of strained Si/Strained SiGe/Strained si heterostructures on insulator by a bond and etch-back techniqueABERG, I; OLUBUVIDE, O. O; LI, J et al.IEEE international SOI conference. 2004, pp 35-36, isbn 0-7803-8497-0, 1Vol, 2 p.Conference Paper

On the suitability of SiGe HBTs for high-temperature (to 300°C) electronicsTIANBING CHEN; KUO, Wei-Min; ENHAI ZHAO et al.Bipolar/BiCMOS Circuits and Technology Meetings. 2004, pp 217-220, isbn 0-7803-8618-3, 1Vol, 4 p.Conference Paper

60GHz transceiver circuits in SiGe bipolar technologyREYNOLDS, Scott; FLOYD, Brian; PFEIFFER, Ullrich et al.IEEE International Solid-State Circuits Conference. 2004, pp 442-443, isbn 0-7803-8267-6, 2Vol, 2 p.Conference Paper

A 108Gb/s 4:1 Multiplexer in 0.13μm SiGe-bipolar technologyMEGHELLI, Mounir.IEEE International Solid-State Circuits Conference. 2004, pp 236-237, isbn 0-7803-8267-6, 2Vol, 2 p.Conference Paper

A 3b 40GS/s ADC-DAC in 0.12μm SiGeCHENG, William; ALI, Wais; CHOI, Moon-Jung et al.IEEE International Solid-State Circuits Conference. 2004, pp 262-263, isbn 0-7803-8267-6, 2Vol, 2 p.Conference Paper

A 35.2-37.6GHz LC VCO in a 70/100GHz f_T/f_max SiGe technologyVEENSTRA, Hugo; VAN DER HEIJDEN, Edwin.IEEE International Solid-State Circuits Conference. 2004, pp 394-395, isbn 0-7803-8267-6, 2Vol, 2 p.Conference Paper

Generation and integration of scalable bipolar compact modelsSHERIDAN, David C; MURTY, Ramana M; NEWTON, Kim M et al.Bipolar/BiCMOS Circuits and Technology Meetings. 2004, pp 132-139, isbn 0-7803-8618-3, 1Vol, 8 p.Conference Paper

A 20GHz VCO with 5GHz tuning range in 0.25μm SiGe BiCMOSJUNG, B; HARJANI, R.IEEE International Solid-State Circuits Conference. 2004, pp 178-179, isbn 0-7803-8267-6, 2Vol, 2 p.Conference Paper

Special issue on silicon germanium - advanced technology, modeling, and designSINGH, Raminderpal; HARAME, David L; MEYERSON, Bernard S et al.Proceedings of the IEEE. 2005, Vol 93, Num 9, issn 0018-9219, 161 p.Serial Issue

Collector vertical scaling and performance tradeoffs in 300 GHz sige HBTSRIEH, J.-S; KHATER, M; SCHONENBERG, K. T et al.DRC : Device research conference. 2004, pp 235-236, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

Experimental verification of substrate coupling in a high-gain 30 Gb/s SiGe amplifierSTEINER, W; REIN, H.-M; BERNTGEN, J et al.Bipolar/BiCMOS Circuits and Technology Meetings. 2004, pp 273-276, isbn 0-7803-8618-3, 1Vol, 4 p.Conference Paper

Anomalous low-frequency noise behavior in 210 GHz SiGe HBTsZHENRONG JIN; JOHANSEN, Jarle A; CRESSLER, John D et al.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 143-149, issn 0277-786X, isbn 0-8194-5839-2, 1Vol, 7 p.Conference Paper

Parameters extraction of a scalable mextram model for high-speed SiGe HBTsWU, H.-C; MIJALKOVIC, S; BURGHARTZ, J et al.Bipolar/BiCMOS Circuits and Technology Meetings. 2004, pp 140-143, isbn 0-7803-8618-3, 1Vol, 4 p.Conference Paper

Sige technology requirements for millimeter-wave applicationsWENNEKERS, P; REUTER, R.Bipolar/BiCMOS Circuits and Technology Meetings. 2004, pp 79-83, isbn 0-7803-8618-3, 1Vol, 5 p.Conference Paper

High velocity electron injection MOSFETs for ballistic transistors using SiGe/strained-Si heterojunction source structuresMIZUNO, T; SUGIYAMA, N; TEZUKA, T et al.Symposium on VLSI Technology. sd, pp 202-203, isbn 0-7803-8289-7, 1Vol, 2 p.Conference Paper

Analysis of Thermoelectric Properties of AlInN Semiconductor AlloysJING ZHANG; HUA TONG; HERBSOMMER, Juan A et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7933, issn 0277-786X, isbn 978-0-8194-8470-3, 79330X.1-79330X.6Conference Paper

High yield reduced process tolerance self-aligned double mesa process technology for SiGe power HBTsLEE, Kok-Yan; JOHNSON, Brian N; MOHAMMADI, Saeed et al.IEEE MTT-S International Microwave Symposium. 2004, isbn 0-7803-8331-1, vol2, 963-966Conference Paper

Experimental extraction and model evaluation of base and collector current RF noise in SiGe HBTsGUOFU NIU; KEJUN XIA; SHERIDAN, David et al.IEEE radio frequency integrated circuits symposium. 2004, pp 615-618, isbn 0-7803-8333-8, 1Vol, 4 p.Conference Paper

Ratio based direct extraction of small-signal parameters for SiGe HBTsKEJUN XIA; GUOFU NIU; SHERIDAN, David et al.Bipolar/BiCMOS Circuits and Technology Meetings. 2004, pp 144-147, isbn 0-7803-8618-3, 1Vol, 4 p.Conference Paper

Noise performance of a low base resistance 200 GHz SiGe technologyGREENBERG, D. R; JAGANNATHAN, B; SWEENEY, S et al.IEDm : international electron devices meeting. 2002, pp 787-790, isbn 0-7803-7462-2, 4 p.Conference Paper

COM2 Enhanced Graded Base SiGe technology for high speed applicationsIVANOV, T; CARROLL, Michael; ESRY, T et al.Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium. 2002, pp 337-340, issn 1529-2517, isbn 0-7803-7246-8, 4 p.Conference Paper

Sub-30 nm P⁺ abrupt junction formation in strained Si/Si_1-xGe_x MOS deviceLEE, K. L; CHU, J; OTT, J et al.IEDm : international electron devices meeting. 2002, pp 379-382, isbn 0-7803-7462-2, 4 p.Conference Paper

Characterization of the effective mobility by split C(V) technique in sub 0.1 μm Si and SiGe PMOSFETsROMANJEK, K; ANDRIEU, F; ERNST, T et al.Solid-state electronics. 2005, Vol 49, Num 5, pp 721-726, issn 0038-1101, 6 p.Article

Growth of nickel silicide quantum dot arrays on epitaxial SI_0.7GE_0.3 on (001) silicon with a sacrificial amorphous silicon interlayerCHEN, L. J; WU, W. W; CHENG, S. L et al.Proceedings - Electrochemical Society. 2003, pp 325-330, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper