Protein folding rates correlate with heterogeneity of folding mechanismÖZTOP, B; EJTEHADI, M. R; PLOTKIN, S. S et al.Physical review letters. 2004, Vol 93, Num 20, pp 208105.1-208105.4, issn 0031-9007Article

Schottky-barrier-height engineering for strained-Si MOSFETsIKEDA, Keiji; YAMASHITA, Yoshimi; ENDOH, Akira et al.DRC : Device research conference. 2004, pp 111-112, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

Effect of lateral inhomogeneity of Barrier height on the photoresponse characteristics of Schottky junctionsHORVATH, Z. J; VO VAN TUYEN.SPIE proceedings series. 1998, pp 65-67, isbn 0-8194-2808-6Conference Paper

Thermally activated escape over fluctuating barriersZÜRCHER, U; DOERING, C. R.Physical review. A. 1993, Vol 47, Num 6E, pp 3862-3869, issn 1050-2947Article

Barrier height of titanium silicide Scholttky barrier diodesKIKUCHI, A.Japanese journal of applied physics. 1986, Vol 25, Num 11, pp L894-L895, issn 0021-4922Article

Theoretical specific resistance of ohmic contracts to n-GaAsYOO, J. S; LEE, H. H.Journal of applied physics. 1990, Vol 68, Num 9, pp 4903-4905, issn 0021-8979Article

The Schottky barrier height at the CoSi₂/Si(111) interfaceREES, N. V; MATTHAI, C. C.Journal of physics. C. Solid state physics. 1988, Vol 21, Num 27, pp L981-L984, issn 0022-3719Article

New method to measure low Schottky barriers on n-type siliconSUU, H. V; PASZTI, F; MEZEY, G et al.Journal of applied physics. 1986, Vol 59, Num 10, pp 3537-3539, issn 0021-8979Article

Escape rates in the region between the Kramers limitsLINKWITZ, S; GRABERT, H.Physical review. A. 1992, Vol 45, Num 6, pp R3369-R3372, issn 1050-2947Article

Schottky contact barrier height enhancement on p-type silicon by wet chemical etchingADEGBOYEGA, G. A; POGGI, A; SUSI, E et al.Applied physics. A, Solids and surfaces. 1989, Vol 48, Num 4, pp 391-395, issn 0721-7250Article

Optische Barrierenmodulation bei Silizium-Bulk-Barrier-Photodioden = Modulation optique de la barrière de potentiel des photodiodes silicium = Optical modulation of the Barrier of Silicon Bulk barrier photodiodesGEORGOULAS, N.AEU. Archiv für Elektronik und Übertragungstechnik. 1989, Vol 43, Num 6, pp 381-387, issn 0001-1096Article

Barrier height enhancement of triangular barrier diodesGUPTA, R. S; CHILANA, G. S; SRIVASTAVA, G. P et al.Journal of applied physics. 1986, Vol 59, Num 12, pp 4103-4107, issn 0021-8979Article

Direct measurement of barrier height at the HfO₂/poly-Si interface : band structure and local effectsPANTISANO, Luigi; CHEN, P. J; AFANAS'EV, V et al.Symposium on VLSI Technology. sd, pp 122-123, isbn 0-7803-8289-7, 1Vol, 2 p.Conference Paper

Quantum wells with localized states at energies above the barrier height : a Fabry-Perot electron filterSIRTORI, C; CAPASSO, F; FAIST, J et al.Applied physics letters. 1992, Vol 61, Num 8, pp 898-900, issn 0003-6951Article

The dependence of barrier height and effective recombination velocity on the grain boundary theories in polycrystalline siliconBEN AMAR, M; BEN ARAB, A.World renewable energy congress. 2000, pp 1986-1989, isbn 0-080-43865-2, 4VolConference Paper

Photocurrent investigation on a graded heterojunctionGRUMMT, G; PICKENHAIN, R; OELGART, G et al.Physica status solidi. A. Applied research. 1990, Vol 122, Num 2, pp 765-772, issn 0031-8965, 8 p.Article

A simplified approach to reduce the effective barrier height of triangular barrier structuresGUPTA, R. S; CHILANA, G. S; SRIVASTAVA, G. P et al.Physica status solidi. A. Applied research. 1986, Vol 96, Num 1, pp K89-K93, issn 0031-8965Article

Eine analytische Approximation für den Potentialverlauf bei Schottky-Randschichten = Approximation analytique du saut de potentiel pour une barrière SchottkyLEMKE, H.Physica status solidi. A. Applied research. 1986, Vol 96, Num 2, pp K213-K217, issn 0031-8965Article

Ramp rate dependence of NiSi formation studied by silicided Schottky contactJIANG, Y.-L; RU, G.-P; LI, B.-Z et al.Electronics Letters. 2005, Vol 41, Num 2, pp 103-104, issn 0013-5194, 2 p.Article

Numerical model for current conduction in single layer organic light-emitting devices including both bulk and injection effectsPENG, Ying-Quan; SONG, Chang-An; SHUO SUN et al.Semiconductor science and technology. 2004, Vol 19, Num 9, pp 1117-1121, issn 0268-1242, 5 p.Article

Band offsets in GaSb/AlGaAsSb : correlation with the Schottky barrier height and the depth of native acceptorsPOLYAKOV, A. Y; MILNES, A. G; EGLASH, S. J et al.Solid-state electronics. 1993, Vol 36, Num 4, pp 649-651, issn 0038-1101Article

Consequences of spatial distributions of the interface states on the Schottky barrierLU, G. N; BARRET, C; NEFFATI, T et al.Solid-state electronics. 1990, Vol 33, Num 1, pp 1-9, issn 0038-1101Article

Temperature dependent barrier heights in bulk unipolar diodes leading to improved temperature stable performanceKEARNEY, M. J; KELLY, M. J; CONDIE, A et al.Electronics Letters. 1990, Vol 26, Num 10, pp 671-672, issn 0013-5194Article

Mechanisms for the formation of low temperature, non-alloyed Au-Ge ohmic contacts to n-GaAsDORNATH-MOR, M. A; COLE, M. W; COSANDEY, F et al.Journal of electronic materials. 1990, Vol 19, Num 11, pp 1247-1255, issn 0361-5235Conference Paper

Schottky barrier instabilities due to contaminationNEWMAN, N; LILIENTAL-WEBER, Z; WEBER, E. R et al.Applied physics letters. 1988, Vol 53, Num 2, pp 145-147, issn 0003-6951Article