High-power electrically injected mid-infrared interband lasers grown by LP-MOCVDLANE, B; RAZEGHI, M.Journal of crystal growth. 2000, Vol 221, pp 679-682, issn 0022-0248Conference Paper

Mid-infrared photoluminescence from liquid phase epitaxial InAs_1-ySb_y/InAs multilayersGONG, X; YAMAGUCHI, T; KAN, H et al.Japanese journal of applied physics. 1997, Vol 36, Num 2, pp 738-742, issn 0021-4922, 1Article

Réalisation par épitaxie par jets moléculaires d'une nouvelle structure laser III-V émettant à plus de 3 μm = Design and MBE growth of a new III-V laser structure emitting above 3 μmWilk, Arnaud; Joullie, Andre.2000, 215 p.Thesis

Comparison of InAs islands self-assembled on pseudomorphic and metamorphic InAlAs buffer layers grown on GaAs substrateCORDIER, Y; MISKA, P; FERRE, D et al.Journal of crystal growth. 2001, Vol 227-28, pp 1016-1019, issn 0022-0248Conference Paper

Investigations of interatomic interaction in Inas-Inas_1-xSb_x heterostructures on a base of X-ray diffractometryBABJUCK, T. I; BUNTAR, A. G; SHEVTCHUK, L. S et al.SPIE proceedings series. 2001, pp 318-320, isbn 0-8194-4136-8Conference Paper

Photoluminescence properties of dense InAs/AlInAs quantum wire arraysHANXUAN LI; DANIELS-RACE, T; HASAN, M.-A et al.Journal of crystal growth. 2000, Vol 216, Num 1-4, pp 527-531, issn 0022-0248Article

Sulphur passivation of InAs(Sb)GONG, X. Y; YAMAGUCHI, T; KAN, H et al.Applied surface science. 1997, Vol 113114, pp 388-392, issn 0169-4332Conference Paper

Bond length relaxation in ultrathin InAs and InP_0.4As_0.6 layers on InP(001)KUWAHARA, Y; OYANAGI, H; SHIODA, R et al.Japanese journal of applied physics. 1994, Vol 33, Num 10, pp 5631-5635, issn 0021-4922, 1Article

Photoconductive spectral analysis of InAs quantum dot under normal incidenceSCHACHAM, S. E; BAHIR, G; FINKMAN, E et al.Infrared physics & technology. 2003, Vol 44, Num 5-6, pp 509-512, issn 1350-4495, 4 p.Conference Paper

Radiation recombination in InAsSb/InAsSbP double heterostructuresAYDARALIEV, M; BRESLER, M. S; GUSEV, O. B et al.Semiconductor science and technology. 1995, Vol 10, Num 2, pp 151-156, issn 0268-1242Article

Molecular beam epitaxy growth and characterization of self-assembled InAs quantum dots on (1 0 0) InAlAs/InP substratesKOO, B. H; PARK, Y.-G; MAKINO, H et al.Applied surface science. 2002, Vol 190, Num 1-4, pp 226-230, issn 0169-4332Conference Paper

Optical characterization of InAs quantum dots fabricated by molecular beam epitaxySAITOH, T; TAKEUCHI, H; KONDA, J et al.Japanese journal of applied physics. 1996, Vol 35, Num 2B, pp 1217-1220, issn 0021-4922, 1Conference Paper

Hole transport in the InSb-InAs material systemEGAN, R. J; CHIN, V. W. L; TRANSLEY, T. L et al.Solid state communications. 1995, Vol 93, Num 7, pp 553-556, issn 0038-1098Article

MBE growth of mid-infrared antimonide LEDs with strained electron barriersLI, X; HEBER, J; PULLIN, M et al.Journal of crystal growth. 2001, Vol 227-28, pp 600-604, issn 0022-0248Conference Paper

Self-assembled InAs quantum wires on InP(001)WU, J; ZENG, Y. P; SUN, Z. Z et al.Journal of crystal growth. 2000, Vol 219, Num 1-2, pp 180-183, issn 0022-0248Article

3.5 W continuous wave operation from quantum dot laserZHUKOV, A. E; KOVSH, A. R; USTINOV, V. M et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 70-74, issn 0921-5107Conference Paper

Staggered vertical self-organization of stacked InAs/InAlAs quantum wires on InP(001)BRAULT, J; GENDRY, M; MARTY, O et al.Applied surface science. 2000, Vol 162-63, pp 584-589, issn 0169-4332Conference Paper

Molecular beam epitaxial growth and thermodynamic analysis of InGaAs and InAlAs lattice matched to InPMCELHINNEY, M; STANLEY, C. R.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 518-522, issn 0022-0248, 1Conference Paper

The growth of infrared antimonide-based semiconductor lasers by metal-organic chemical vapor depositionBIEFELD, R. M; ALLERMAN, A. A; KURTZ, S. R et al.Journal of materials science. Materials in electronics. 2002, Vol 13, Num 11, pp 649-657, issn 0957-4522, 9 p.Article

MBE growth of InAs/InAsSb/InAlAsSb W quantum well laser diodes emitting near 3 μmWILK, A; FRAISSE, B; CHRISTOL, P et al.Journal of crystal growth. 2001, Vol 227-28, pp 586-590, issn 0022-0248Conference Paper

Light emitting diodes fabricated from liquid phase epitaxial InAs/InAs_xP_1-x-ySb_y/InAs_x, P_1-x'-y'Sb_y' and InAs/InAs_1-xSb_x multi-layersGONG, X. Y; KAN, H; MAKINO, T et al.Crystal research and technology (1979). 2000, Vol 35, Num 5, pp 549-555, issn 0232-1300Article

Light-illuminated STM studies on photo-absorption in InAs nanowiresTAKAHASHI, Takuji; TAKADA, Kan; TAKEUCHI, Misaichi et al.Ultramicroscopy. 2003, Vol 97, Num 1-4, pp 1-6, issn 0304-3991, 6 p.Conference Paper

Charging dynamics of self-assembled InAs quantum dots investigated by wavelength selective optically induced charge storage measurementsHEINRICH, D; HOFFMANN, J; ZRENNER, A et al.Physica status solidi. B. Basic research. 2001, Vol 224, Num 2, pp 357-360, issn 0370-1972Conference Paper

Adsorption of amino acids on indium arsenide (100) surfaces : Assessment of passivation capabilitiesSLAVIN, John W. J; ZEMLYANOV, Dmitry; IVANISEVIC, Albena et al.Surface science. 2009, Vol 603, Num 6, pp 907-911, issn 0039-6028, 5 p.Article

Can any design support an effective nanostructure lasing for a few THz?SHVARTSMAN, L. D; LAIKHTMAN, B.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 689304.1-689304.13, issn 0277-786X, isbn 0-8194-7068-6, 1VolConference Paper