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Auger recombination in a quantum-well-heterostructure laserTAYLOR, R. I; ABRAM, R. A; BURT, M. G et al.IEE proceedings. Part J. Optoelectronics. 1985, Vol 132, Num 6, pp 364-370, issn 0267-3932Article

Auger recombination rate in quantum well lasers: modification by electron-electron interaction in quasi two dimensionsBASU, P. K.Journal of applied physics. 1984, Vol 56, Num 11, pp 3344-3346, issn 0021-8979Article

Recombinaison Auger interbande dans des structures laser en GaSbGEL'MONT, B. L; SOKOLOVA, Z. N; KHALFIN, V. B et al.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 10, pp 1803-1807, issn 0015-3222Article

Radiative efficiency in low-dimensional semiconductor structuresBURT, M. G; TAYLOR, R. I.Electronics Letters. 1985, Vol 21, Num 17, pp 733-734, issn 0013-5194Article

Auger recombination in long-wavelength quantum-well lasersSMITH, C; ABRAM, R. A; BURT, M. G et al.Electronics Letters. 1984, Vol 20, Num 21, pp 893-894, issn 0013-5194Article

Simulation studies of the dynamic behavior of semiconductor lasers with Auger recombinationMING TANG; SHYH WANG.Applied physics letters. 1987, Vol 50, Num 26, pp 1861-1863, issn 0003-6951Article

Theory and modeling of type-II strained-layer superlattice detectorsFLATTE, Michael E; GREIN, Christoph H.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7222, issn 0277-786X, isbn 978-0-8194-7468-1 0-8194-7468-1, 1Vol, 72220Q.1-72220Q.9Conference Paper

Beyond the ABC : Carrier recombinations in semiconductor lasersHADER, J; MOLONEY, J. V; KOCH, S. W et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 61151T.1-61151T.7, issn 0277-786X, isbn 0-8194-6157-1, 1VolConference Paper

Novel bandgap grading technique for enhancing the limiting efficiency of solar cellsHABIB, S. E.-D; RAFAT, N. H.Renewable energy. 1997, Vol 10, Num 2-3, pp 129-134, issn 0960-1481Conference Paper

Theoretical prediction of the impact of Auger recombination on charge collection from an ion trackEDMONDS, L. D.IEEE transactions on nuclear science. 1991, Vol 38, Num 5, pp 999-1004, issn 0018-9499Article

Intervalence-band absorption in relation to Auger recombination in laser materialsTAKESHIMA, M.Japanese journal of applied physics. 1984, Vol 23, Num 4, pp 428-435, issn 0021-4922, 1Article

Dynamics of Quantized Auger Recombination in CdSe Nanocrystals Studied by Femtosecond Intraband Pump―Probe SpectroscopyUEDA, Akihiro; TAYAGAKI, Takeshi; KANEMITSU, Yoshihiko et al.Journal of the Physical Society of Japan. 2009, Vol 78, Num 8, issn 0031-9015, 083706.1-083706.4Article

Photoluminescence from silicon nanocrystals initiated by Auger recombinationPURITIS, Talivaldis; KAUPUZS, Jevgenijs.Physica. E, low-dimentional systems and nanostructures. 2006, Vol 35, Num 1, pp 16-22, issn 1386-9477, 7 p.Article

Spontaneous radiative recombination and nonradiative Auger recombination in quantum-confined heterostructuresASRYAN, L. V.Quantum electronics (Woodbury). 2005, Vol 35, Num 12, pp 1117-1120, issn 1063-7818, 4 p.Article

Probing into the effect of Auger recombination mechanism on zero bias resistance―area product in In1―xGaxAs detectorYUCHUN CHANG; BAO SHI; LONGHAI LI et al.Solid state communications. 2011, Vol 151, Num 24, pp 1953-1957, issn 0038-1098, 5 p.Article

Localized Auger Recombination in Quantum-Dot LasersBLOOD, Peter; PASK, Helen; SUMMERS, Huw D et al.IEEE journal of quantum electronics. 2007, Vol 43, Num 11-12, pp 1140-1146, issn 0018-9197, 7 p.Article

Simulation of InSb devices using drift-diffusion equationsSIJERCIC, E; MUELLER, K; PEJCINOVIC, B et al.Solid-state electronics. 2005, Vol 49, Num 8, pp 1414-1421, issn 0038-1101, 8 p.Article

Auger Recombination of Photogenerated Charges in One-Dimensional Mott InsulatorsSEGAWA, Mami; TAKAHASHI, Akira; GOMI, Hiroki et al.Journal of the Physical Society of Japan. 2011, Vol 80, Num 8, issn 0031-9015, 084721.1-084721.10Article

Control of Auger Recombination Rate in Si_1-xGe_x/Si HeterostructuresTAYAGAKI, Takeshi; FUKATSU, Susumu; KANEMITSU, Yoshihiko et al.Journal of the Physical Society of Japan. 2010, Vol 79, Num 1, issn 0031-9015, 013701.1-013701.4Article

Impact ionization and Auger recombination at high carrier temperatureTAKEDA, Yasuhiko; ITO, Tadashi; SUZUKI, Ryo et al.Solar energy materials and solar cells. 2009, Vol 93, Num 6-7, pp 797-802, issn 0927-0248, 6 p.Conference Paper

The influence of screening on the Auger coefficient of 1.3 μm InGaAsP lattice matched to InPYEVICK, D; BARDYSZEWSKI, W.IEEE journal of quantum electronics. 1987, Vol 23, Num 2, pp 168-170, issn 0018-9197Article

Carrier loss resulting from Auger recombination in InGaAsP/InP double heterojunction laser diodes: spectroscopy of 950 nm high energy emissionWEIHUA ZHUANG; BAOZHEN ZHENG; JUNYING XU et al.IEEE journal of quantum electronics. 1985, Vol 21, Num 6, pp 712-715, issn 0018-9197Article

Temperature dependence of carrier lifetime and Auger recombination in 1.3 υm InGaAsPSERMAGE, B; HERITAGE, J. P; DUTTA, N. K et al.Journal of applied physics. 1985, Vol 57, Num 12, pp 5443-5449, issn 0021-8979Article

Phonon-assisted Auger recombination in a quasi-two-dimensional structure se miconductorTAKESHIMA, M.Physical review. B, Condensed matter. 1984, Vol 30, Num 6, pp 3302-3308, issn 0163-1829Article