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Automatic extraction of circuit models from layout artwork for a BiCMOS technologyHOOK, T. B.IEEE transactions on computer-aided design of integrated circuits and systems. 1992, Vol 11, Num 6, pp 732-738, issn 0278-0070Article

An advanced PNP bipolar transistor design for low-power and very-high-performance quarter-micron CBiCMOS processDJEZZAR, B; BELAROUSSI, M. T.International conference on microelectronic. 1997, pp 509-512, isbn 0-7803-3664-X, 2VolConference Paper

A BiCMOS 10Gb/s adaptive cable equalizerGUANGYU ZHANG; CHAUDHARI, Pruthvi; GREEN, Michael M et al.IEEE International Solid-State Circuits Conference. 2004, pp 482-483, isbn 0-7803-8267-6, 2Vol, 2 p.Conference Paper

In-line metrology methods for manufacturing control of BiCMOS filmsPRINTY, Craig; SEMICONDUCTOR, National.IEEE / SEMI advanced semiconductor manufacturing conference. 2004, pp 348-354, isbn 0-7803-8312-5, 1Vol, 7 p.Conference Paper

Integration of power devices in advanced mixed signal analog BiCMOS technologyEFLAND, T. R.Microelectronics journal. 2001, Vol 32, Num 5-6, pp 409-418, issn 0959-8324Article

A 20GHz VCO with 5GHz tuning range in 0.25μm SiGe BiCMOSJUNG, B; HARJANI, R.IEEE International Solid-State Circuits Conference. 2004, pp 178-179, isbn 0-7803-8267-6, 2Vol, 2 p.Conference Paper

New full-voltage-swing BiCMOS buffersEMBABI, S. H. K; BALLAOUAR, A; ELMASRY, M. I et al.IEEE journal of solid-state circuits. 1991, Vol 26, Num 2, pp 150-153, issn 0018-9200, 4 p.Article

Tiny op amp targets miniature portable electronicsBINDRA, A.Electronic design. 1998, Vol 46, Num 6, pp 40-46, issn 0013-4872, 4 p.Article

A few CMOS transconductors optimized for low power and wide band operationRAUT, Rabin; NING GUO.Circuits, systems, and signal processing. 2001, Vol 20, Num 6, pp 655-675, issn 0278-081XArticle

Copper contamination effect on the reliability of devices in the BiCMOS technologyKIA SENG LOW; SCHWERD, M; KOERNER, H et al.SPIE proceedings series. 1999, pp 24-33, isbn 0-8194-3480-9Conference Paper

Comparison of Gummel-Poon and quasi-saturation models in BiCMOS switchingDAI, Y; YUAN, J. S.International journal of electronics. 1998, Vol 84, Num 4, pp 307-319, issn 0020-7217Article

An integrated linear RF power detectorKULHALLI, Suhas; SETH, Sumantra; FU, Shih-Tsang et al.IEEE International Symposium on Circuits and Systems. 2004, pp 625-628, isbn 0-7803-8251-X, 4 p.Conference Paper

A BiCMOS image sensor circuit for pattern recognition neural networkKUO, J. B; WONG, E. J; CHOU, T. L et al.IEEE transactions on circuits and systems. 1991, Vol 38, Num 12, pp 1554-1556, issn 0098-4094Article

BiCMOS implementation of a fuzzy systemMCDAID, L. J; MCGINNITY, T. M; MAGUIRE, L. P et al.Computers & electrical engineering. 1998, Vol 24, Num 1-2, pp 99-111, issn 0045-7906Article

A dual-mode 802.11b/bluetooth receiver in 0.25μm BiCMOSEMIRA, Ahmed A; VALDES-GARCIA, Alberto; BO XIA et al.IEEE International Solid-State Circuits Conference. 2004, pp 270-271, isbn 0-7803-8267-6, 2Vol, 2 p.Conference Paper

Hardware implementation of a pulse-stream neural networkHAYCOCK, R. J; YORK, T. A.IEE proceedings. Circuits, devices and systems. 1998, Vol 145, Num 3, pp 141-147, issn 1350-2409Article

0.3 μm BiCMOS SRAM technologies with 1.5V operationSUZUKI, H; YOSHIDA, H; YAMAZAKI, T et al.NEC research & development. 1997, Vol 38, Num 4, pp 405-411, issn 0547-051XArticle

Performance-driven scaling of BiCMOS technologyRAJE, P. A; SARASWAT, K. C; CHAM, K. M et al.I.E.E.E. transactions on electron devices. 1992, Vol 39, Num 3, pp 685-694, issn 0018-9383Article

COM2 Enhanced Graded Base SiGe technology for high speed applicationsIVANOV, T; CARROLL, Michael; ESRY, T et al.Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium. 2002, pp 337-340, issn 1529-2517, isbn 0-7803-7246-8, 4 p.Conference Paper

Suppression of arsenic autodoping with rapid thermal epitaxy for low power bipolar complementary metal oxide semiconductorKING, C. A; JOHNSON, R. W; CHIU, T. Y et al.Journal of the Electrochemical Society. 1995, Vol 142, Num 7, pp 2430-2434, issn 0013-4651Article

Double-Emitter HCBT Structure—A High-Voltage Bipolar Transistor for BiCMOS IntegrationKORICIC, Marko; SULIGOJ, Tomislav; MOCHIZUKI, Hidenori et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 12, pp 3647-3650, issn 0018-9383, 4 p.Article

A New Class of Fully Active Reconfigurable Filters for Cognitive CommunicationsLAKYS, Yahya; FABRE, Alain; GODARA, Balwant et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7745, issn 0277-786X, isbn 9780819472358, 77451P.1-77451P.7Conference Paper

Multiple-valued decoder using MOS-HBT-NDR circuitGAN, K.-J; LIANG, D.-S; TSAI, C.-S et al.Electronics Letters. 2007, Vol 43, Num 20, pp 1092-1093, issn 0013-5194, 2 p.Article

Bipolar SCR ESD devicesVASHCHENKO, V. A; HOPPER, P.Microelectronics and reliability. 2005, Vol 45, Num 3-4, pp 457-471, issn 0026-2714, 15 p.Article

PLL line augmented by fractional-N ICsBROWNE, J.Microwaves & RF. 1998, Vol 37, Num 2, pp 153-154, issn 0745-2993Article

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