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EVIDENCE FOR THE CREATION OF THE MAIN ELECTRON TRAP IN BULK GAASMARTIN GM; TERRIAC P; MAKRAM EBEID S et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 1; PP. 61-63; BIBL. 15 REF.Article

A THEORETICAL APPROACH TO EXCITON TRAPPING IN SYSTEMS WITH ARBITRARY TRAP CONCENTRATIONKENKRE VM.1982; CHEMICAL PHYSICS LETTERS; ISSN 0009-2614; NLD; DA. 1982; VOL. 93; NO 3; PP. 260-263; BIBL. 11 REF.Article

EXCITON COLLECTION FROM AN ANTENNA SYSTEM INTO ACCESSIBLE TRAPSTACHIKAWA H; FAULKNER LR.1978; J. AMER. CHEM. SOC.; USA; DA. 1978; VOL. 100; NO 25; PP. 8025-8026; BIBL. 11 REF.Article

EFFECTS OF AMMONIA ANNEAL ON ELECTRON TRAPPINGS IN SILICON DIOXIDELAI SK; DONG DW; HARTSTEIN A et al.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 9; PP. 2042-2044; BIBL. 14 REF.Article

RELATION BETWEEN CR-LEVEL AND MAIN ELECTRON TRAP (EL2) IN BOAT-GROWN BULK GAASHASEGAWA F; IWATA N; NANNICHI Y et al.1982; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 10; PART. 1; PP. 1479-1484; BIBL. 36 REF.Article

ELECTRON TRAPPING AND DETRAPPING CHARACTERISTICS OF ARSENIC-IMPLANTED SIO2 LAYERSDE KEERSMAECKER RF; DI MARIA DJ.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 2; PP. 1085-1101; BIBL. 47 REF.Article

MODEL OF BACKSURFACE GETTERING OF METAL IMPURITIES IN SILICONVENGURLEKAR AS.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 9; PP. 830-832; BIBL. 13 REF.Article

RANDOM-WALK STUDIES OF EXCITATION TRAPPING IN CRYSTALSZUMOFEN G; BLUMEN A.1982; CHEM. PHYS. LETT.; ISSN 0009-2614; NLD; DA. 1982; VOL. 88; NO 1; PP. 63-67; BIBL. 24 REF.Article

POINT-CONTACT INJECTION AT HIGH FIELDS IN INSULATOR WITH TRAPS & THERMAL FREE CARRIERSSHARMA YK.1982; INDIAN J. PURE APPL. PHYS.; ISSN 0019-5596; IND; DA. 1982; VOL. 20; NO 2; PP. 130-132; BIBL. 5 REF.Article

ABSORPTION TIME BY A RANDOM TRAP DISTRIBUTIONROSENSTOCK HB; STRALEY JP.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 24; NO 5; PP. 2540-2544; BIBL. 7 REF.Article

LOW-TEMPERATURE ENERGY TRAPPING AND EMISSION LINE PROFILE OF DISORDERED SOLIDSMORGAN JR; EL SAYED MA.1983; JOURNAL OF PHYSICAL CHEMISTRY; ISSN 0022-3654; USA; DA. 1983; VOL. 87; NO 3; PP. 383-385; BIBL. 12 REF.Article

COMMENTS ON THE EV+0.45 EV QUENCHED-IN LEVEL IN SILICONIOANNOU DE.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 72; NO 1; PP. K33-K36; BIBL. 12 REF.Article

INTERPRETATION OF PROFILES OBTAINED BY C(V) TECHNIQUE IN PRESENCE OF DEEP TRAPS: APPLICATION TO PROTON IRRADIATED GAAS SAMPLESLOUALICHE S; NOUAILHAT A; GUILLOT G et al.1982; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 7; PP. 577-582; BIBL. 9 REF.Article

BULK IMPURITY CHARGE TRAPPING IN BURIED CHANNEL CHARGE COUPLED DEVICESMCNUTT MJ; MEYER WE.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 4; PP. 892-896; BIBL. 8 REF.Article

ETUDE DES FLUCTUATIONS DE GRANDES DIMENSIONS DU POTENTIEL DANS LES DETECTEURS SEMICONDUCTEURS DE RAYONNEMENTS NUCLEAIRESEREMIN VK; STROKAN NB; TISNEK NI et al.1978; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1978; VOL. 12; NO 4; PP. 718-724; BIBL. 8 REF.Article

CARRIER DENSITY FLUCTUATIONS DUE TO DISTRIBUTION OF TRAPS IN SEMICONDUCTORSSATO H.1982; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 7; PART. 1; PP. 1014-1016; BIBL. 9 REF.Article

DISTRIBUTION SPATIALE DE LA CHARGE CAPTUREE DANS LES COUCHES DE NITRURE DE SILICIUM DANS DES STRUCTURES ELECTROLYTE-NITRURE DE SILICIUM-OXYDE DE SILICIUM - SILICIUMSHIRSHOV YU M; NABOK AV; GOLTVYANSKIJ YU V et al.1982; MIKROELEKTRONIKA; ISSN 0544-1269; SUN; DA. 1982; VOL. 11; NO 3; PP. 223-228; BIBL. 12 REF.Article

DEEP LEVEL TRANSIENT SPECTROSCOPY STUDY IN N-TYPE INPLIM H; SAGNES G; BASTIDE G et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 4; PP. 3317-3320; BIBL. 6 REF.Article

TRAPPING OF FRENKEL EXCITONSHUBER DL.1982; JOURNAL OF LUMINESCENCE; ISSN 0022-2313; NLD; DA. 1982; VOL. 27; NO 3; PP. 333-338; BIBL. 5 REF.Article

TRAPPING PARAMETERS FROM ISOTHERMAL DECAY OF THERMOLUMINESCENCELILLEY E; MOHARIL SV.1982; J. PHYS. D; ISSN 0022-3727; GBR; DA. 1982; VOL. 15; NO 3; PP. L17-L19; BIBL. 7 REF.Article

COMMENTS ON ASCARELLI'S PAPERS ON ELECTRON TRAPPING IN LIQUID AR, KR, AND XESHIBAMURA E; TAKAHASHI T; KUBOTA S et al.1982; J. CHEM. PHYS.; ISSN 0021-9606; USA; DA. 1982; VOL. 77; NO 6; PP. 3290-3292; BIBL. 12 REF.Article

PHOTOCONDUCTIVITE D'IMPURETES DANS GASE INDUITE PAR UN ECLAIREMENT AUXILIAIRE INTRINSEQUEABDINOV A SH; AKHMEDOV AA; MAMEDOV NK et al.1980; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1980; VOL. 14; NO 1; PP. 164-169; BIBL. 14 REF.Article

CURRENT-FIELD CHARACTERISTICS OF OXIDES GROWN FROM POLYCRYSTALLINE SILICONCHENMING HU; YING SHUM; KLEIN T et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 35; NO 2; PP. 189-191; BIBL. 11 REF.Article

EFFECT OF ELECTRON TRAPS ON RESIDUAL VOLTAGE IN CHALCOGENIDE PHOTORECEPTORSOKUDA M; MOTOMURA K; NAITO H et al.1982; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 9; PART. 1; PP. 1293-1297; BIBL. 5 REF.Article

EFFECTS OF GATE METALS ON INTERFACE EFFECTS IN METAL OXIDE SEMICONDUCTOR SYSTEMS AFTER ELECTRON TRAPPINGLAI SK.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 10; PP. 7104-7105; BIBL. 14 REF.Article

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