COVALENCE DANS LES STRUCTURES ELEMENTAIRES ET LES COMPOSES AB. II. DEVELOPPEMENTS EN MOMENTSFRIEDEL J; LANNOO M.1973; J. PHYS.; G.B.; DA. 1973; VOL. 34; NO 5-6; PP. 483-493; ABS. ANGL.; BIBL. 25 REF.Serial Issue

TIME-DEPENDENT SOLUTION TO INTERSTITIAL DIFFUSION IN A TEMPERATURE GRADIENT = SOLUTION DEPENDANTE DU TEMPS DE LA DIFFUSION INTERSTITIELLE DANS UN GRADIENT DE TEMPERATURELEE CE; WALLACE TC.1975; NUCL. TECHNOL.; U.S.A.; DA. 1975; VOL. 25; NO 1; PP. 124-137; BIBL. 24 REF.Article

PROPRIETES OPTIQUES DES SUPERRESEAUX FORMES DE SEMICONDUCTEURS A STRUCTURE DE BANDE COMPLEXESHIK A YA.1972; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1972; VOL. 6; NO 7; PP. 1268-1277; BIBL. 16 REF.Serial Issue

EVALUATION DES COMPOSES BINAIRES UTILISABLES COMME SOURCES DE DIFFUSION.SALBREUX JC.sdDGRST-7470419; FR.; DA. S.D.; PP. 1-91; BIBL. 1 P. 1/2; (RAPP. FINAL, ACTION CONCERTEE: COMPOSANTS CIRCUITS MICROMINIATURISES)Report

EFFET DE L'INHOMOGENEITE SUR L'ABSORPTION ULTRASONORE ET D'AUTRES EFFETS ACOUSTOELECTRONIQUES DANS LES CRISTAUX DU TYPE A^IIB^VIBELYAEV AD; OLIKH YA M; MISELYUK EG et al.1974; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1974; NO 18; PP. 59-61; BIBL. 3 REF.Article

COVALENCE DANS LES STRUCTURES ELEMENTAIRES ET LES COMPOSES AB. I. THEOREME DE LEMAN, THORPE ET WEAIREFRIEDEL J; LANNOO M.1973; J. PHYS.; FR.; DA. 1973; VOL. 34; NO 1; PP. 115-121; ABS. ANGL.; BIBL. 14 REF.Serial Issue

ETATS DE SURFACE SUR DES CRISTAUX MIXTES TRIDIMENSIONNELS PAR UNE METHODE DE LIMITE DE BANDEGEORGIEV GI.1973; ACTA PHYS. ACAD. SCI. HUNGAR.; HONGR.; DA. 1973; VOL. 33; NO 1; PP. 17-21; ABS. ANGL.; BIBL. 4 REF.Serial Issue

LOW-RESISTIVITY N-TYPE LAYERS IN INAS_XP_1-X BY ION IMPLANTATION.DAVIES DE; KENNEDY JK; LOWE LF et al.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 19; PP. 462-463; BIBL. 10 REF.Article

NEW SEMICONDUCTING MATERIALS.NIKOLIC PM.1975; SCI. OF SINTERG; YUGOSL.; DA. 1975; VOL. 7; NO 2; PP. 129-146; BIBL. 4 P.Article

A REVIEW OF THE THEORY AND TECHNOLOGY FOR OHMIC CONTACTS TO GROUP II-V COMPOUND SEMICONDUCTORS.RIDEOUT VL.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 6; PP. 541-550; BIBL. 33 REF.Article

ELECTROCHEMICAL TECHNIQUE FOR THE CONTINUOUS AUTOMATIC PLOTTING OF SEMICONDUCTOR DONOR CONCENTRATION OVER LARGE DEPTHS.AMBRIDGE T; FAKTOR MM.1974; ELECTRON. LETTERS; G.B.; DA. 1974; VOL. 10; NO 10; PP. 204-205; BIBL. 7 REF.Article

SUBBAND STRUCTURES OF N-CHANNEL INVERSION LAYERS ON III-V COMPOUNDS. A POSSIBILITY OF THE GATE CONTROLLED GUNN EFFECT.TAKADA Y; UEMURA Y.1977; J. PHYS. SOC. JAP.; JAP.; DA. 1977; VOL. 43; NO 1; PP. 139-150; BIBL. 21 REF.Article

RELATION OF SCHOTTKY BARRIERS TO EMPTY SURFACE STATES ON III-V SEMICONDUCTORS.EASTMAN DE; FREEOUF JL.1975; PHYS. REV. LETTERS; U.S.A.; DA. 1975; VOL. 34; NO 26; PP. 1624-1627; BIBL. 19 REF.Article

FEW CHARACTERISTICS OF EPITAXIAL GAN-ETCHING AND THERMAL DECOMPOSITION.MORIMOTO Y.1974; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1974; VOL. 121; NO 10; PP. 1383-1384; BIBL. 3 REF.Article

EXCITON PERCOLATION. I. MIGRATION DYNAMICS.HOSHEN J; KOPELMAN R.1976; J. CHEM. PHYS.; U.S.A.; DA. 1976; VOL. 65; NO 7; PP. 2817-2823; BIBL. 14 REF.Article

BINARY SILICA OPTICAL FIBERS: REFRACTIVE INDEX AND PROFILE DISPERSION MEASUREMENTS.PRESBY HM; KAMINOW IP.1976; APPL. OPT.; U.S.A.; DA. 1976; VOL. 15; NO 12; PP. 3029-3036; BIBL. 26 REF.Article

PROBLEMS IN OPTOELECTRONIC SEMICONDUCTORS.WHITE AM.1975; J. MATER. SCI.; G.B.; DA. 1975; VOL. 10; NO 4; PP. 714-726; BIBL. 104 REF.Article

DEPENDENCE OF THE STEEPNESS OF THE EXPONENTIAL ABSORPTION TAIL ON THE CHEMICAL COMPOSITION OF MATERIALSLASTOVICKOVA M.1972; CZECHOSL. J. PHYS.; CZECHOSL.; DA. 1972; VOL. 22; NO 12; PP. 1220-1225; BIBL. 29 REF.Serial Issue

EVALUATION PAR ORDINATEUR DE LA TEMPERATURE DE TRANSITION A L'ETAT SUPRACONDUCTEUR DES COMPOSES BINAIRES DU TYPE A15GRIBULYA VB; SAVITSKIJ EM.1978; DOKL. AKAD. NAUK S.S.S.R.; S.S.S.R.; DA. 1978; VOL. 240; NO 2; PP. 316-319; BIBL. 3 REF.Article

ON THE SPUTTERING OF BINARY COMPOUNDS.HAFF PK; SWITKOWSKI ZE.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 29; NO 9; PP. 549-551; BIBL. 13 REF.Article

THE ANTISYMMETRIC GAP AND THE TOTAL WIDTH OF THE VALENCE BAND OF BINARY COMPOUND CRYSTALS.UNGER K; NEUMANN H.1974; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1974; VOL. 64; NO 1; PP. 117-122; ABS. ALLEM.; BIBL. 1 P. 1/2Article

VAPOR-PHASE GROWTH OF SEVERAL III-V COMPOUND SEMICONDUCTORSTIETJEN JJ; ENSTROM RE; BAN VS et al.1972; SOLID STATE TECHNOL.; U.S.A.; DA. 1972; VOL. 15; NO 10; PP. 42-49; BIBL. 76 REF.Serial Issue

A RELATIONSHIP BETWEEN PHOTOEMISSION-DETERMINED VALENCE BAND GAPS IN SEMICONDUCTORS AND INSULATORS AND IONICITY PARAMETERSGROBMAN WD; EASTMAN DE; COHEN ML et al.1973; PHYS. LETTERS, A; NETHERL.; DA. 1973; VOL. 43; NO 1; PP. 49-50; BIBL. 8 REF.Serial Issue

ETUDE DES MATERIAUX SEMICONDUCTEURS DU GROUPE IV-VI EN VUE DE LEURS APPLICATIONS EN OPTOELECTRONIQUEBALKANSKI M; MARTINEZ G.1972; DGRST-70 02 181; FR.; DA. 1972; PP. (95 P.); BIBL. DISSEM.; RAPP. FINAL, ACTION CONCERTEE: PHYS. ELECTRON.). 5 FASCReport

LATTICE MATCH IN THE HETEROEPITAXY OF III-V COMPOUND ALLOYSMORIIZUMI T; TAKAHASHI K.1972; J. APPL. PHYS.; U.S.A.; DA. 1972; VOL. 43; NO 11; PP. 4606-4608; BIBL. 10 REF.Serial Issue