kw.\*:("CONTACT OHMIQUE")
Results 1 to 25 of 2341
Selection :
CONTACTS OHMIQUES SUR DES MONOCRISTAUX CDCR2SE4KALINNIKOV VT; AMINOV TG; VIGILEVA ES et al.1975; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1975; NO 1; PP. 227-229; BIBL. 7 REF.Article
PRODUCTION DE CONTACTS OHMIQUES SUR DES DIAMANTS ARTIFICIELS SYNTHETIQUES SEMICONDUCTEURS PAR LA METHODE DE PULVERISATION SOUS VIDEROTNER YU M; GOLEMBIEVSKIJ NN; LITOVCHENKO LF et al.1975; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1975; NO 1; PP. 226-227; BIBL. 6 REF.Article
AU/GE BASED OHMIC CONTACTS TO GAASGROVENOR CRM.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 8; PP. 792-793; BIBL. 20 REF.Article
METHODE SIMPLE DE CONTROLE DE L'OHMICITE DES CONTACTS METAL-SEMICONDUCTEURGULYAEV IB; ZHDAN AG.1976; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1976; NO 2; PP. 203-204; BIBL. 3 REF.Article
BASES PHYSIQUES DE LA PREPARATION DE CONTACTS OHMIQUES METAL-SEMICONDUCTEUR. IISTRIKHA VI; POPOVA GD; BUZANEVA EV et al.1975; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1975; NO 20; PP. 20-35; BIBL. 4 P.Article
A MODEL OF OHMIC CONTACTS TO SEMICONDUCTORS.PELLEGRINI B; SALARDI G.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 9; PP. 791-798; BIBL. 28 REF.Article
OHMIC CONTACTS TO CDS.YAMAGUCHI M.1974; JAP. J. APPL. PHYS.; JAP.; DA. 1974; VOL. 13; NO 8; PP. 1325-1326; BIBL. 5 REF.Article
PRODUCTION DE CONTACTS OHMIQUES SUR DU GAAS SEMI-ISOLANTFOMIN NG; VOROB'EV YU V; TRETYAK OV et al.1974; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1974; NO 3; PP. 222-223; BIBL. 4 REF.Article
CONTACT OHMIQUE AVEC UN MONOCRISTAL DE SILICIUMSEVERDENKO VP; GURSKIJ LI; KOLESHKO VM et al.1972; VESCI AKAD. NAVUK B.S.S.R., FIZ.-TEKH. NAVUK; S.S.S.R.; DA. 1972; NO 2; PP. 71-74; BIBL. 5 REF.Serial Issue
CONTACTS OHMIQUES SUR LES MONOCRISTAUX EN GASBSANDULOVA AV; GONCHAROV VP; SYDIR BI et al.1972; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1972; NO 4; PP. 216-218; BIBL. 10 REF.Serial Issue
ZUR FRAGE OHMSCHER KONTAKTE BEI CDS-EINKRISTALLEN = CONTACTS OHMIQUES SUR MONOCRISTAUX DE SULFURE DE CADMIUMENTZIAN W.1972; WISSENSCH. Z. UNIV. ROSTOCK. MATH.-NATURWISSENSCH. REIHE; DTSCH.; DA. 1972; VOL. 20; NO 7; PP. 409-412; ABS. RUSSE ANGL. FR.; BIBL. 13 REF.Serial Issue
A NEW TECHNIQUE FOR FABRICATION OF OHMIC CONTACTS TO GAAS DEVICES.OMPRAKASH.1974; J. INSTIT. ELECTRON. TELECOMMUNIC. ENGRS; INDIA; DA. 1974; VOL. 20; NO 3-4; PP. 153-158; BIBL. 15 REF.Article
REACTIONS BETWEEN THE TA-PT-TA-AU METALLIZATION AND PTSI OHMIC CONTACTS.DAY HM; CHRISTOU A; WEISENBERGER WH et al.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 6; PP. 769-772; BIBL. 19 REF.Article
LA STABILITE FONCTIONNELLE DE LA JONCTION P-NGOVORENKOV VN; KANISHCHEV AF; KIRILENKO VG et al.1974; VESCI AKAD. NAVUK B.S.S.R., FIZ.-TEKH. NAVUK; S.S.S.R.; DA. 1974; NO 4; PP. 124-125Article
CONTACTS OHMIQUES SUR SEMICONDUCTEURS DU TYPE A2B6 POUR UNE LARGE GAMME DE TEMPERATUREPEKAR GS; KHANROS LI; SHEJNKMAN MK et al.1975; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1975; NO 6; PP. 238-239; BIBL. 9 REF.Article
COMPLEX DISTRIBUTION EFFECTS OF THIN COMPONENT OHMIC-CONTACT LAYERS ON GAAS.WEISS BL; HARTNAGEL HL.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 12; PP. 263-264; BIBL. 5 REF.Article
THERMISCHE EFFEKTE IN ELEKTRISCHEN KONTAKTEN ZWISCHEN IDENTISCHEN HALBLEITERNWYSSMANN P.1972; PHYS. KONDENS. MATERIE; DTSCH.; DA. 1972; VOL. 14; NO 4; PP. 275-306; ABS. ANGL.; BIBL. 39 REF.Serial Issue
EXPERIMENTAL EVIDENCE FOR GAAS SURFACE QUALITY AFFECTING OHMIC CONTACT PROPERTIES.PARIA H; HARTNAGEL H.1976; APPL. PHYS.; GERM.; DA. 1976; VOL. 10; NO 1; PP. 97-99; BIBL. 3 REF.Article
OHMIC CONTACTS FOR MODERATELY RESISTIVE P-TYPE INP.SCHIAVONE LM; PRITCHARD AA.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 1; PP. 452-453; BIBL. 7 REF.Article
GERMANIUM-DOPED GAAS FOR P-TYPE OHMIC CONTACTS.KETCHOW DR.1974; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1974; VOL. 121; NO 9; PP. 1237-1239; BIBL. 5 REF.Article
EXPERIMENTAL VERIFICATION OF NEW GUNN-EFFECT REFLECTION-INSENSITIVE PULSE REGENERATORHARIU T; HARTNAGEL H.1973; ELECTRON. LETTERS; G.B.; DA. 1973; VOL. 9; NO 5; PP. 112-113; BIBL. 4 REF.Serial Issue
RADIATION-INDUCED DEGRADATION OF OHMIC CONTACTS.BLUNDELL R; MORGAN DV; HOWES MJ et al.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 16; PP. 483-484; BIBL. 5 REF.Article
NEW METHOD FOR PRODUCING IDEAL METAL-SEMICONDUCTOR OHMIC CONTACTS.SEBESTYEN T; HARTNAGEL H; HERRON LH et al.1974; ELECTRON. LETTERS; G.B.; DA. 1974; VOL. 10; NO 18; PP. 378-373; BIBL. 7 REF.Article
A TECHNIQUE TO OBTAIN DEEP PENETRATING OHMIC CONTACTS FOR ELECTRICAL MEASUREMENTS ON ION IMPLANTED SILICON.CEMBALI F; GALLONI R; ZIGNANI F et al.1974; J. PHYS. E; G.B.; DA. 1974; VOL. 7; NO 9; PP. 698-700; BIBL. 4 REF.Article
THE EFFECTS OF CONTACT SIZE AND NON-ZERO METAL RESISTANCE ON THE DETERMINATION OF SPECIFIC CONTACT RESISTANCEMARLOW GS; DAS MB.1982; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 2; PP. 91-94; BIBL. 3 REF.Article